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Title	Author(s)	Issue Date	Views
Depth profiling of charging effect of Si nanocrystals embedded in SiO2: A study of charge diffusion among Si nanocrystals Journal:Journal of Physical Chemistry B	Liu, Y Chen, TP Ng, CY Ding, L Zhang, S Fu, YQ Fung, S	2006	198
Depth profiling of Si nanocrystals in Si-implanted SiO2 films by spectroscopic ellipsometry Journal:Applied Physics Letters	Chen, TP Liu, Y Tse, MS Ho, PF Dong, G Fung, S	2003	180
Depth Profiling of Si Oxidation States in Si-Implanted SiO 2 Films by X-Ray Photoelectron Spectroscopy Journal:Japanese Journal of Applied Physics, Part 2: Letters	Liu, Y Fu, YQ Chen, TP Tse, MS Fung, S Hsieh, JH Yang, XH	2003	73
Determination of leakage resistance of Schottky contacts by photovoltage measurements Journal:Journal of Applied Physics	Chen, TP Lee, TC Fung, S Beling, CD	1994
Dielectric functions of densely stacked Si nanocrystal layer embedded in SiO 2 thin films Journal:Applied Physics Letters	Ding, L Chen, TP Wong, JI Yang, M Liu, Y Ng, CY Liu, YC Tung, CH Trigg, AD Fung, S	2006	170
Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film Journal:IEEE Transactions on Electron Devices	Hu, SG Liu, Y Chen, TP Liu, Z Yang, M Yu, Q Fung, S	2012	147
The effect of the temperature dependence of the ideality factor on metal-semiconductor solar devices Journal:Semiconductor Science and Technology	Lee, TC Chen, TP Au, HL Fung, S Beling, CD	1993	116
Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams Journal:Journal of Applied Physics	Ng, CY Chen, TP Zhao, P Ding, L Liu, Y Tseng, AA Fung, S	2006
Electrically induced room temperature metastability in semi-insulating GaAs Journal:Solid State Communications	Fung, S Luo, YL Beling, CD Chen, TP	1998
Energy shifts of Si oxidation states in the system of Si nanocrystals embedded in SiO 2 matrix Journal:Journal of Nanoscience and Nanotechnology	Chen, TP Liu, Y Sun, CQ Tseng, AA Fung, S	2007	52
Evolution of electroluminescence from multiple Si-implanted silicon nitride films with thermal annealing Journal:Journal of Applied Physics	Cen, ZH Chen, TP Ding, L Liu, Y Wong, JI Yang, M Liu, Z Goh, WP Zhu, FR Fung, S	2009	175
Evolution of photoluminescence mechanisms of Si +-implanted SiO 2 films with thermal annealing Journal:Journal of Nanoscience and Nanotechnology	Ding, L Chen, TP Liu, Y Ng, CY Yang, M Wong, JI Zhu, FR Tan, MC Fung, S Chen, XD Huang, Y	2008	93
Fermi level position at metal/semi-insulating - GaAs (1 0 0) interfaces studied by photoelectric techniques Journal:Solid State Communications	Chen, TP Luo, YL Fung, S Beling, CD	1997	65
Flexible write-once-read-many-times memory device based on a nickel oxide thin film Journal:IEEE Transactions on Electron Devices	Yu, Q Liu, Y Chen, TP Liu, Z Yu, YF Lei, HW Zhu, J Fung, S	2012	134
Influence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces Journal:Journal of Applied Physics	Chen, TP Liu, YC Fung, S Beling, CD	1995	149
Influence of charge trapping on electroluminescence from Si-nanocrystal light emitting structure Journal:Journal of Applied Physics	Liu, Y Chen, TP Ding, L Yang, M Wong, JI Ng, CY Yu, SF Li, ZX Yuen, C Zhu, FR Tan, MC Fung, S	2007	200
Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films Journal:Applied Physics A: Materials Science and Processing	Cen, ZH Chen, TP Ding, L Liu, Z Wong, JI Yang, M Goh, WP Fung, S	2011	193
Influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal-oxide-semiconductor transistors Journal:Applied Physics Letters	Chen, TP Huang, JY Tse, MS Tan, SS Ang, CH Fung, S	2003	177
Influence of nanocrystal size on optical properties of Si nanocrystals embedded in Si O2 synthesized by Si ion implantation Journal:Journal of Applied Physics	Ding, L Chen, TP Liu, Y Yang, M Wong, JI Liu, YC Trigg, AD Zhu, FR Tan, MC Fung, S	2007
Influence of nitrogen on tunneling barrier heights and effective masses of electrons and holes at lightly-nitrided SiO2/Si interface Journal:Journal of Applied Physics	Ng, CY Chen, TP Liu, Y Sun, CQ Fung, S	2004	116

Showing results 21 to 40 of 87 < previous next >