File Download
Links for fulltext
(May Require Subscription)
- Publisher Website: 10.1063/1.359089
- Scopus: eid_2-s2.0-0009321394
- WOS: WOS:A1995RD57200098
- Find via
Supplementary
- Citations:
- Appears in Collections:
Article: Influence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces
Title | Influence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces |
---|---|
Authors | |
Keywords | Physics engineering |
Issue Date | 1995 |
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp |
Citation | Journal of Applied Physics, 1995, v. 77 n. 12, p. 6724-6726 How to Cite? |
Abstract | The measurements of internal photoemission and photovoltage within the temperature range of 7-300 K have been performed for unannealed and annealed Au/n-Si and Au/n-GaAs samples. From the internal photoemission measurements, it was observed that annealing at different temperatures does not affect the relativity of interfacial Fermi-level pinning to either the conduction band (for Au/GaAs) or the valence band (for Au/Si) but leads to a significant change of the Schottky barrier height. On the other hand, the photovoltage measurements show that the current transport at the metal/semiconductor interfaces is seriously affected by annealing. © 1995 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/42227 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, TP | en_HK |
dc.contributor.author | Liu, YC | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.date.accessioned | 2007-01-08T02:32:00Z | - |
dc.date.available | 2007-01-08T02:32:00Z | - |
dc.date.issued | 1995 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 1995, v. 77 n. 12, p. 6724-6726 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42227 | - |
dc.description.abstract | The measurements of internal photoemission and photovoltage within the temperature range of 7-300 K have been performed for unannealed and annealed Au/n-Si and Au/n-GaAs samples. From the internal photoemission measurements, it was observed that annealing at different temperatures does not affect the relativity of interfacial Fermi-level pinning to either the conduction band (for Au/GaAs) or the valence band (for Au/Si) but leads to a significant change of the Schottky barrier height. On the other hand, the photovoltage measurements show that the current transport at the metal/semiconductor interfaces is seriously affected by annealing. © 1995 American Institute of Physics. | en_HK |
dc.format.extent | 409877 bytes | - |
dc.format.extent | 9781 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.rights | Copyright 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1995, v. 77 n. 12, p. 6724-6726 and may be found at https://doi.org/10.1063/1.359089 | - |
dc.subject | Physics engineering | en_HK |
dc.title | Influence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=77&issue=12&spage=6724&epage=6726&date=1995&atitle=Influence+of+annealing+on+Fermi-level+pinning+and+current+transport+at+Au-si+and+Au-GaAs+Interfaces | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.359089 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0009321394 | en_HK |
dc.identifier.hkuros | 9245 | - |
dc.identifier.volume | 77 | en_HK |
dc.identifier.issue | 12 | en_HK |
dc.identifier.spage | 6724 | en_HK |
dc.identifier.epage | 6726 | en_HK |
dc.identifier.isi | WOS:A1995RD57200098 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Chen, TP=36442234400 | en_HK |
dc.identifier.scopusauthorid | Liu, YC=7410214740 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.issnl | 0021-8979 | - |