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Article: Influence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces

TitleInfluence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfaces
Authors
Chen, TPLiu, YCFung, SBeling, CD
KeywordsPhysics engineering
Issue Date1995
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1995, v. 77 n. 12, p. 6724-6726 How to Cite?
DOI: http://dx.doi.org/10.1063/1.359089
AbstractThe measurements of internal photoemission and photovoltage within the temperature range of 7-300 K have been performed for unannealed and annealed Au/n-Si and Au/n-GaAs samples. From the internal photoemission measurements, it was observed that annealing at different temperatures does not affect the relativity of interfacial Fermi-level pinning to either the conduction band (for Au/GaAs) or the valence band (for Au/Si) but leads to a significant change of the Schottky barrier height. On the other hand, the photovoltage measurements show that the current transport at the metal/semiconductor interfaces is seriously affected by annealing. © 1995 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42227
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:A1995RD57200098

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLiu, YCen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-01-08T02:32:00Z-
dc.date.available2007-01-08T02:32:00Z-
dc.date.issued1995en_HK
dc.identifier.citationJournal of Applied Physics, 1995, v. 77 n. 12, p. 6724-6726-
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42227-
dc.description.abstractThe measurements of internal photoemission and photovoltage within the temperature range of 7-300 K have been performed for unannealed and annealed Au/n-Si and Au/n-GaAs samples. From the internal photoemission measurements, it was observed that annealing at different temperatures does not affect the relativity of interfacial Fermi-level pinning to either the conduction band (for Au/GaAs) or the valence band (for Au/Si) but leads to a significant change of the Schottky barrier height. On the other hand, the photovoltage measurements show that the current transport at the metal/semiconductor interfaces is seriously affected by annealing. © 1995 American Institute of Physics.en_HK
dc.format.extent409877 bytes-
dc.format.extent9781 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCopyright 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 1995, v. 77 n. 12, p. 6724-6726 and may be found at https://doi.org/10.1063/1.359089-
dc.subjectPhysics engineeringen_HK
dc.titleInfluence of annealing on Fermi-level pinning and current transport at Au-Si and Au-GaAs Interfacesen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=77&issue=12&spage=6724&epage=6726&date=1995&atitle=Influence+of+annealing+on+Fermi-level+pinning+and+current+transport+at+Au-si+and+Au-GaAs+Interfacesen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.359089en_HK
dc.identifier.scopuseid_2-s2.0-0009321394en_HK
dc.identifier.hkuros9245-
dc.identifier.volume77en_HK
dc.identifier.issue12en_HK
dc.identifier.spage6724en_HK
dc.identifier.epage6726en_HK
dc.identifier.isiWOS:A1995RD57200098-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridLiu, YC=7410214740en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.issnl0021-8979-

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