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Article: The effect of the temperature dependence of the ideality factor on metal-semiconductor solar devices

TitleThe effect of the temperature dependence of the ideality factor on metal-semiconductor solar devices
Authors
Lee, TCChen, TPAu, HLFung, SBeling, CD
Issue Date1993
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 1993, v. 8 n. 7, p. 1357-1360 How to Cite?
DOI: http://dx.doi.org/10.1088/0268-1242/8/7/027
AbstractThe diode performance of Au/n-Si and Au/n-GaAs systems has been investigated within the temperature range of 100 K to 300 K. From the results of photovoltage and I-V measurements, the calculated solar cell efficiency of the Au/n-Si diode degrades significantly from the ideal case (n factor equal to 1). The change of the efficiency of the Au/n-GaAs system with temperature, however, adheres closely to the ideal case. The difference between the results of these two systems is explained by the recombination current effect, which appears to be more significant in the Au/n-Si system.
Persistent Identifierhttp://hdl.handle.net/10722/174701
ISSN
0268-1242
2021 Impact Factor: 2.048
2020 SCImago Journal Rankings: 0.712
ISI Accession Number ID
WOS:A1993LM47700027

 

DC FieldValueLanguage
dc.contributor.authorLee, TCen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorAu, HLen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2012-11-26T08:46:56Z-
dc.date.available2012-11-26T08:46:56Z-
dc.date.issued1993en_HK
dc.identifier.citationSemiconductor Science And Technology, 1993, v. 8 n. 7, p. 1357-1360en_HK
dc.identifier.issn0268-1242en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174701-
dc.description.abstractThe diode performance of Au/n-Si and Au/n-GaAs systems has been investigated within the temperature range of 100 K to 300 K. From the results of photovoltage and I-V measurements, the calculated solar cell efficiency of the Au/n-Si diode degrades significantly from the ideal case (n factor equal to 1). The change of the efficiency of the Au/n-GaAs system with temperature, however, adheres closely to the ideal case. The difference between the results of these two systems is explained by the recombination current effect, which appears to be more significant in the Au/n-Si system.en_HK
dc.languageengen_US
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_HK
dc.relation.ispartofSemiconductor Science and Technologyen_HK
dc.titleThe effect of the temperature dependence of the ideality factor on metal-semiconductor solar devicesen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1088/0268-1242/8/7/027en_HK
dc.identifier.scopuseid_2-s2.0-0027627522en_HK
dc.identifier.volume8en_HK
dc.identifier.issue7en_HK
dc.identifier.spage1357en_HK
dc.identifier.epage1360en_HK
dc.identifier.isiWOS:A1993LM47700027-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLee, TC=36347141200en_HK
dc.identifier.scopusauthoridChen, TP=36442234400en_HK
dc.identifier.scopusauthoridAu, HL=7004152230en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.issnl0268-1242-

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