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Article: Effect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film

TitleEffect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide film
Authors
Hu, SGLiu, YChen, TPLiu, ZYang, MYu, QFung, S
KeywordsHeat diffusion
Mechanism competition
Nickel oxide
Resistive random access memory (RRAM)
Dominant process
Issue Date2012
PublisherIEEE.
Citation
IEEE Transactions on Electron Devices, 2012, v. 59 n. 5, p. 1558-1562 How to Cite?
DOI: http://dx.doi.org/10.1109/TED.2012.2186300
AbstractThe switching behaviors of the resistive switching device based on Ni-rich nickel oxide thin film during the set and reset processes in the pulse voltage experiment have been examined. In the switching from a high-resistance state (HRS) to a low-resistance state (LRS) during the set process, the formation of filament is the dominant process. The switching is easier to occur with a shorter off time between pulses, indicating that heat diffusion plays an important role. On the other hand, in the switching from the LRS to the HRS during the reset process, there is a competition between the formation and deformation of filament, which is much stronger than that in the set process. The heat diffusion during the off time between pulses affects both the formation and deformation of filaments. Thus, there is no definite relationship in statistics between the off time and the occurrence of the reset switching. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/146899
ISSN
0018-9383
2021 Impact Factor: 3.221
2020 SCImago Journal Rankings: 0.828
ISI Accession Number ID
WOS:000303202900045
Funding AgencyGrant Number
NSFC60806040
Fundamental Research Funds for the Central UniversitiesZYGX2009X006
Young Scholar Fund of Sichuan2011JQ002
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

Manuscript received October 14, 2011; revised December 16, 2011 and January 22, 2012; accepted January 23, 2012. Date of publication February 14, 2012; date of current version April 25, 2012. This work was supported in part by NSFC under Project 60806040, the Fundamental Research Funds for the Central Universities under Project ZYGX2009X006, the Young Scholar Fund of Sichuan under Project 2011JQ002, and the National Research Foundation of Singapore under Project NRF-G-CRP 2007-01. The review of this paper was arranged by Editor R. Venkatasubramanian.

 

DC FieldValueLanguage
dc.contributor.authorHu, SGen_US
dc.contributor.authorLiu, Yen_US
dc.contributor.authorChen, TPen_US
dc.contributor.authorLiu, Zen_US
dc.contributor.authorYang, Men_US
dc.contributor.authorYu, Qen_US
dc.contributor.authorFung, Sen_US
dc.date.accessioned2012-05-23T05:49:03Z-
dc.date.available2012-05-23T05:49:03Z-
dc.date.issued2012en_US
dc.identifier.citationIEEE Transactions on Electron Devices, 2012, v. 59 n. 5, p. 1558-1562en_US
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/146899-
dc.description.abstractThe switching behaviors of the resistive switching device based on Ni-rich nickel oxide thin film during the set and reset processes in the pulse voltage experiment have been examined. In the switching from a high-resistance state (HRS) to a low-resistance state (LRS) during the set process, the formation of filament is the dominant process. The switching is easier to occur with a shorter off time between pulses, indicating that heat diffusion plays an important role. On the other hand, in the switching from the LRS to the HRS during the reset process, there is a competition between the formation and deformation of filament, which is much stronger than that in the set process. The heat diffusion during the off time between pulses affects both the formation and deformation of filaments. Thus, there is no definite relationship in statistics between the off time and the occurrence of the reset switching. © 2012 IEEE.-
dc.languageengen_US
dc.publisherIEEE.-
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.subjectHeat diffusion-
dc.subjectMechanism competition-
dc.subjectNickel oxide-
dc.subjectResistive random access memory (RRAM)-
dc.subjectDominant process-
dc.titleEffect of heat diffusion during state transitions in resistive switching memory device based on nickel-rich nickel oxide filmen_US
dc.typeArticleen_US
dc.identifier.emailLiu, Y: yliu2008@e.ntu.edu.sgen_US
dc.identifier.emailChen, TP: echentp@ntu.edu.sg-
dc.identifier.emailFung, S: sfung@hku.hk-
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2012.2186300-
dc.identifier.scopuseid_2-s2.0-84862798418-
dc.identifier.hkuros199582en_US
dc.identifier.volume59en_US
dc.identifier.issue5-
dc.identifier.spage1558en_US
dc.identifier.epage1562en_US
dc.identifier.isiWOS:000303202900045-
dc.publisher.placeUnited States-
dc.identifier.issnl0018-9383-

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