Showing results 18 to 21 of 21
< previous
Title | Author(s) | Issue Date | Views | |
---|---|---|---|---|
Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector Journal:IEEE Transactions on Electron Devices | 1997 | 193 | ||
CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors Journal:Applied Physics Letters | 1996 | 119 | ||
1997 | 172 | |||
Carbon-doped GaInP/GaAs double heterostructure-emitter bipolar transistors with high current gain Journal:IEEE Transactions on Electron Devices | 1995 | 153 |