Results 1 to 5 of 5
Page 1 of 1
TypeTitleAuthor(s)YearViews
Identities of the deep level defects E 1/E 2 in 6H silicon carbide
Proceedings/Conference:
Materials Science Forum
Publisher:
Trans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
Ling, CC; Chen, XD; Gong, M; Weng, HM; Hang, DS; Beling, CD; Fung, S; Lam, TW; Lam, CH2004117
 
Vacancy in 6H-silicon carbide studied by slow positron beam
Journal:
Chinese Physics Letters
Publisher:
Zhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL
Wang, HY; Weng, HM; Hang, DS; Zhou, XY; Ye, BJ; Fan, YM; Han, RD; Ling, CC; Hui, YP2003207
 
Is the Ga vacancy related defect the residual acceptor of gallium antimonide?
Proceedings/Conference:
Proceedings of the 3rd International Workshop on Positron Studies of Semiconductor Defects
Publisher:
Tohoku University.
Ling, FCC; Chen, X; Weng, HM; Hang, DS; Lui, MKP; Lam, CH; Cheah, KW; Li, KF; Mui, WK; Beling, CD; Fung, SHY2003152
 
Undoped gallium antimonide studied by positron annihilation spectroscopy
Proceedings/Conference:
Materials Research Society Symposium - Proceedings
Publisher:
Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Ma, SK; Ling, CC; Weng, HM; Hang, DS2003290
 
Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopy
Proceedings/Conference:
Materials Research Society Symposium - Proceedings
Publisher:
Materials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Lam, CH; Ling, CC; Beling, CD; Fung, S; Weng, HM; Hang, DS2003369
 
Page 1 of 1
Export Records
Step 1: Select content and export format
  • Citation only
Step 2: Select export method
  • Download