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TypeTitleAuthor(s)YearViews
Identities of the deep level defects E 1/E 2 in 6H silicon carbideLing, CC; Chen, XD; Gong, M; Weng, HM; Hang, DS; Beling, CD; Fung, S; Lam, TW; Lam, CH200477
 
Vacancy in 6H-silicon carbide studied by slow positron beamWang, HY; Weng, HM; Hang, DS; Zhou, XY; Ye, BJ; Fan, YM; Han, RD; Ling, CC; Hui, YP2003171
 
Is the Ga vacancy related defect the residual acceptor of gallium antimonide?Ling, FCC; Chen, X; Weng, HM; Hang, DS; Lui, MKP; Lam, CH; Cheah, KW; Li, KF; Mui, WK; Beling, CD; Fung, SHY2003129
 
Undoped gallium antimonide studied by positron annihilation spectroscopyMa, SK; Ling, CC; Weng, HM; Hang, DS2003273
 
Vacancies in electron irradiated 6H silicon carbide studied by positron annihilation spectroscopyLam, CH; Ling, CC; Beling, CD; Fung, S; Weng, HM; Hang, DS2003328
 
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