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Conference Paper: Undoped gallium antimonide studied by positron annihilation spectroscopy

TitleUndoped gallium antimonide studied by positron annihilation spectroscopy
Authors
KeywordsPhysics engineering chemistry
Issue Date2003
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Progress in compound semiconductor materials III - electronic and optoelectronic applications, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 1-4 December 2003, v. 799, p. 65-70 How to Cite?
AbstractPositron lifetime spectroscopy has been used to study the vacancy type defects in undoped gallium antimonide. Temperature dependent positron trapping into the VGarelated defect having a characteristic lifetime of 310ps was observed in the as-grown sample. The lifetime data were well described by a model involving the thermal ionization (0/-) of the VGa-related defect and its ionization energy was found to be E(0/)=83meV. For the electron irradiated sample, the VGa-related defect with lifetime of 310ps that was found in the non-irradiated samples was also identified. Moreover, another lifetime component (280ps) was only observed in the electron irradiated sample but not in the non-irradiated sample. It was also attributed to the V Ga-related defect. The two identified VGa-related defects should have different microstructures because of their difference in characteristic lifetimes. The 280ps component remains thermally stable after the 500°C annealing while the 310ps component anneals at 300°C.
Persistent Identifierhttp://hdl.handle.net/10722/47041
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorMa, SKen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorWeng, HMen_HK
dc.contributor.authorHang, DSen_HK
dc.date.accessioned2007-10-30T07:05:06Z-
dc.date.available2007-10-30T07:05:06Z-
dc.date.issued2003en_HK
dc.identifier.citationProgress in compound semiconductor materials III - electronic and optoelectronic applications, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 1-4 December 2003, v. 799, p. 65-70en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47041-
dc.description.abstractPositron lifetime spectroscopy has been used to study the vacancy type defects in undoped gallium antimonide. Temperature dependent positron trapping into the VGarelated defect having a characteristic lifetime of 310ps was observed in the as-grown sample. The lifetime data were well described by a model involving the thermal ionization (0/-) of the VGa-related defect and its ionization energy was found to be E(0/)=83meV. For the electron irradiated sample, the VGa-related defect with lifetime of 310ps that was found in the non-irradiated samples was also identified. Moreover, another lifetime component (280ps) was only observed in the electron irradiated sample but not in the non-irradiated sample. It was also attributed to the V Ga-related defect. The two identified VGa-related defects should have different microstructures because of their difference in characteristic lifetimes. The 280ps component remains thermally stable after the 500°C annealing while the 310ps component anneals at 300°C.en_HK
dc.format.extent291578 bytes-
dc.format.extent1036577 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineering chemistryen_HK
dc.titleUndoped gallium antimonide studied by positron annihilation spectroscopyen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=799&spage=65&epage=70&date=2004&atitle=Undoped+gallium+antimonide+studied+by+positron+annihilation+spectroscopyen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.scopuseid_2-s2.0-3042675789en_HK
dc.identifier.hkuros85832-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-3042675789&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume799en_HK
dc.identifier.spage65en_HK
dc.identifier.epage70en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridMa, SK=7403725465en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridWeng, HM=7102468725en_HK
dc.identifier.scopusauthoridHang, DS=7004115517en_HK

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