File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Identities of the deep level defects E 1/E 2 in 6H silicon carbide

TitleIdentities of the deep level defects E 1/E 2 in 6H silicon carbide
Authors
KeywordsDLTS
E 1/E 2
Positron Lifetime Spectroscopy
Silicon Carbide
Issue Date2004
PublisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.net
Citation
Materials Science Forum, 2004, v. 445-446, p. 135-137 How to Cite?
AbstractE 1/E 2 (Ec-0.36/0.44eV) are deep level donors generally found in ion-implanted, electron and neutron irradiated n-type 6H-SiC materials, Their configurations are controversial and have been related to a negatively charged carbon vacancy, a divacancy or a V si-complex . With positron lifetime technique, we have identified V si and V cV si in the Lely grown n-type 6H-SiC sample, with V si annealed out at 650°C. Concentration of V cV si persists at 1400°C annealing and significantly decreased after the 1600°C annealing. Considering the deep level transient spectroscopic (DLTS) results on the neutron irradiated n-type SiC epi sample that E 1/E 2 completely disappeared after the 1400°C annealing, E 1/E 2 is not the V cV Si defect. With positron annihilation techniques, Rempel et al [1] have shown the energy dependence of vacancy generated by electron irradiation. With low irradiation energy of 0.3MeV, only V c was generated and at higher energy (0.5MeV), Si vacancy was detected. With focus to find the minimum energy for generating E 1/E 2, we have performed DLTS studies on n-type epi 6H-SiC materials irradiated by electrons with varying energies. Our results suggest that E 1/E 2 have microstructure related to a carbon vacancy or a carbon interstitial.
Persistent Identifierhttp://hdl.handle.net/10722/176172
ISSN
2005 Impact Factor: 0.399
References

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorWeng, HMen_HK
dc.contributor.authorHang, DSen_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLam, TWen_HK
dc.contributor.authorLam, CHen_HK
dc.date.accessioned2012-11-26T09:06:37Z-
dc.date.available2012-11-26T09:06:37Z-
dc.date.issued2004en_HK
dc.identifier.citationMaterials Science Forum, 2004, v. 445-446, p. 135-137en_US
dc.identifier.issn0255-5476en_HK
dc.identifier.urihttp://hdl.handle.net/10722/176172-
dc.description.abstractE 1/E 2 (Ec-0.36/0.44eV) are deep level donors generally found in ion-implanted, electron and neutron irradiated n-type 6H-SiC materials, Their configurations are controversial and have been related to a negatively charged carbon vacancy, a divacancy or a V si-complex . With positron lifetime technique, we have identified V si and V cV si in the Lely grown n-type 6H-SiC sample, with V si annealed out at 650°C. Concentration of V cV si persists at 1400°C annealing and significantly decreased after the 1600°C annealing. Considering the deep level transient spectroscopic (DLTS) results on the neutron irradiated n-type SiC epi sample that E 1/E 2 completely disappeared after the 1400°C annealing, E 1/E 2 is not the V cV Si defect. With positron annihilation techniques, Rempel et al [1] have shown the energy dependence of vacancy generated by electron irradiation. With low irradiation energy of 0.3MeV, only V c was generated and at higher energy (0.5MeV), Si vacancy was detected. With focus to find the minimum energy for generating E 1/E 2, we have performed DLTS studies on n-type epi 6H-SiC materials irradiated by electrons with varying energies. Our results suggest that E 1/E 2 have microstructure related to a carbon vacancy or a carbon interstitial.en_HK
dc.languageengen_US
dc.publisherTrans Tech Publications Ltd. The Journal's web site is located at http://www.scientific.neten_HK
dc.relation.ispartofMaterials Science Forumen_HK
dc.rightsMaterials Science Forum. Copyright © Trans Tech Publications Ltd.-
dc.subjectDLTSen_HK
dc.subjectE 1/E 2en_HK
dc.subjectPositron Lifetime Spectroscopyen_HK
dc.subjectSilicon Carbideen_HK
dc.titleIdentities of the deep level defects E 1/E 2 in 6H silicon carbideen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.4028/www.scientific.net/MSF.445-446.135-
dc.identifier.scopuseid_2-s2.0-2442471806en_HK
dc.identifier.hkuros85710-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-2442471806&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume445-446en_HK
dc.identifier.spage135en_HK
dc.identifier.epage137en_HK
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridWeng, HM=7102468725en_HK
dc.identifier.scopusauthoridHang, DS=7004115517en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLam, TW=35334634100en_HK
dc.identifier.scopusauthoridLam, CH=24525955200en_HK

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats