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Article: Vacancy in 6H-silicon carbide studied by slow positron beam

TitleVacancy in 6H-silicon carbide studied by slow positron beam
Authors
Issue Date2003
PublisherZhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPL
Citation
Chinese Physics Letters, 2003, v. 20 n. 7, p. 1105-1108 How to Cite?
AbstractThe defect changes in 6H-SiC after annealing and 10 MeV electron irradiation have been studied by using a variable-energy positron beam. It was found that after annealing, the defect concentration in n-type 6H-SiC decreased due to recombination with interstitials. When the sample was annealed at 1400°C for 30min in vacuum, a 20-nm thickness Si layer was found on the top of the SiC substrate, this is a direct proof of the Si atoms diffusing to surface when annealed at high temperature stages. After 10 MeV electron irradiation, for n-type 6H-SiC, the S parameter increased from 0.4739 to 0.4822, and the relative positron-trapping rate was about 27.878 times of the origin sample, this shows that there are some defects created in n-type 6H-SiC. For p-type 6H-SiC, it is very unclear, this may be because of the opposite charge of vacancy defects.
Persistent Identifierhttp://hdl.handle.net/10722/80642
ISSN
2015 Impact Factor: 0.875
2015 SCImago Journal Rankings: 0.278
References

 

DC FieldValueLanguage
dc.contributor.authorWang, HYen_HK
dc.contributor.authorWeng, HMen_HK
dc.contributor.authorHang, DSen_HK
dc.contributor.authorZhou, XYen_HK
dc.contributor.authorYe, BJen_HK
dc.contributor.authorFan, YMen_HK
dc.contributor.authorHan, RDen_HK
dc.contributor.authorLing, CCen_HK
dc.contributor.authorHui, YPen_HK
dc.date.accessioned2010-09-06T08:08:42Z-
dc.date.available2010-09-06T08:08:42Z-
dc.date.issued2003en_HK
dc.identifier.citationChinese Physics Letters, 2003, v. 20 n. 7, p. 1105-1108en_HK
dc.identifier.issn0256-307Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/80642-
dc.description.abstractThe defect changes in 6H-SiC after annealing and 10 MeV electron irradiation have been studied by using a variable-energy positron beam. It was found that after annealing, the defect concentration in n-type 6H-SiC decreased due to recombination with interstitials. When the sample was annealed at 1400°C for 30min in vacuum, a 20-nm thickness Si layer was found on the top of the SiC substrate, this is a direct proof of the Si atoms diffusing to surface when annealed at high temperature stages. After 10 MeV electron irradiation, for n-type 6H-SiC, the S parameter increased from 0.4739 to 0.4822, and the relative positron-trapping rate was about 27.878 times of the origin sample, this shows that there are some defects created in n-type 6H-SiC. For p-type 6H-SiC, it is very unclear, this may be because of the opposite charge of vacancy defects.en_HK
dc.languageengen_HK
dc.publisherZhongguo Wuli Xuehui & Institute of Physics Publishing Ltd. The Journal's web site is located at http://www.iop.org/EJ/journal/CPLen_HK
dc.relation.ispartofChinese Physics Lettersen_HK
dc.titleVacancy in 6H-silicon carbide studied by slow positron beamen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0256-307X&volume=20&spage=1105&epage=1108&date=2003&atitle=Vacancy+in+6H-Silicon+Carbide+studied+by+slow+positron+beamen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0256-307X/20/7/339en_HK
dc.identifier.scopuseid_2-s2.0-24144466580en_HK
dc.identifier.hkuros84994en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-24144466580&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume20en_HK
dc.identifier.issue7en_HK
dc.identifier.spage1105en_HK
dc.identifier.epage1108en_HK
dc.publisher.placeChinaen_HK
dc.identifier.scopusauthoridWang, HY=7501740999en_HK
dc.identifier.scopusauthoridWeng, HM=7102468725en_HK
dc.identifier.scopusauthoridHang, DS=7004115517en_HK
dc.identifier.scopusauthoridZhou, XY=7410093961en_HK
dc.identifier.scopusauthoridYe, BJ=7102338554en_HK
dc.identifier.scopusauthoridFan, YM=7403491929en_HK
dc.identifier.scopusauthoridHan, RD=7202457519en_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridHui, YP=12757488800en_HK

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