Results 1 to 6 of 6
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TypeTitleAuthor(s)YearViews
A study of Inx Ga1-x N growth by reflection high-energy electron diffraction
Journal:
Journal of Applied Physics
Publisher:
American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Liu, Y; Xie, MH; Cao, YG; Wu, HS; Tong, SY2005565
 
Coherent and dislocated three-dimensional islands of Inx Ga1-x N self-assembled on GaN(0001) during molecular-beam epitaxy
Journal:
Physical Review B - Condensed Matter and Materials Physics
Publisher:
American Physical Society. The Journal's web site is located at http://prb.aps.org/
Liu, Y; Cao, YG; Wu, HS; Xie, MH; Tong, SY2005705
 
In situ revelation of a zinc-blende InN wetting layer during Stranski-Krastanov growth on GaN(0001) by molecular-beam epitaxy
Journal:
Physical Review B - Condensed Matter and Materials Physics
Publisher:
American Physical Society. The Journal's web site is located at http://prb.aps.org/
Cao, YG; Xu, SH; Lü, W; Dai, XQ; Chan, YF; Wang, N; Liu, Y; Wu, HS; Xie, MH; Tong, SY2005651
 
Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy
Journal:
Physical Review B - Condensed Matter and Materials Physics
Publisher:
American Physical Society. The Journal's web site is located at http://prb.aps.org/
Cao, YG; Xie, MH; Liu, Y; Xu, SH; Ng, YF; Wu, HS; Tong, SY2003543
 
InN Island shape and its dependence on growth condition of molecular-beam epitaxy
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Cao, YG; Xie, MH; Liu, Y; Ng, YF; Wu, HS; Tong, SY2003601
 
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy
Journal:
Applied Physics Letters
Publisher:
American Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Ng, YF; Cao, YG; Xie, MH; Wang, XL; Tong, SY2002399
 
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