Showing results 1 to 8 of 8
Title | Author(s) | Issue Date | Views | |
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Growth of Si1-xGex heterostructures using gas-source molecular beam epitaxy Journal:International Journal of Optoelectronics | 1994 | |||
Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4 Journal:Journal of Crystal Growth | 1993 | |||
1992 | ||||
Initial stage of GaN growth and its implication to defect formation in films Journal:Physical Review B (Condensed Matter) | 2001 | 114 | ||
Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy Journal:Applied Physics Letters | 2000 | 273 | ||
1993 | ||||
Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy Journal:Physical Review B (Condensed Matter) | 2000 | 147 | ||
Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys Journal:Applied Physics Letters | 1993 | 60 |