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Article: RHEED investigation of Ge surface segregation during gas source MBE of Si Si1 - xGex heterostructures

TitleRHEED investigation of Ge surface segregation during gas source MBE of Si Si1 - xGex heterostructures
Authors
Issue Date1993
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Citation
Surface Science, 1993, v. 284 n. 3, p. 305-314 How to Cite?
AbstractGe segregation during silicon gas source molecular beam epitaxy (Si-GSMBE) has been studied by in situ growth rate measurements using reflection-high-energy-electron diffraction (RHEED) intensity oscillations. Growth rate of Si on Si1 - xGex gradually decreases to the Si homoepitaxial growth rate, which is attributed to Ge surface segregation at the growth interface. This segregation has been modelled using a mass balance equation and it has been found that the observed growth rate enhancement can be used as a direct measure of the Ge segregation. Using this novel in situ technique, concentration dependence of Ge segregation was studied, and it was found that the segregation decay curve is nonlinear, resulting in two segregation regimes dependent upon the Ge concentration, consistent with previous studies. Temperature dependence studies reveal that surface hydrogen, which is produced by the dissociation of Si2H6 and GeH4 on the surface during growth, may act as a growth controlling surfactant, and comparison with solid source growth results suggests that it significantly suppresses the Ge segregation, leading to a more precise control of the interface. Finally, the thermal stability of the segregated surfaces was examined. Growth interruption and annealing during Si overlayer growth on Si1 - xGex resulted in a small increase in the surface Ge concentration, which may be ascribed to the outdiffusion effect of Ge from the near surface region. © 1993.
Persistent Identifierhttp://hdl.handle.net/10722/174695
ISSN
2015 Impact Factor: 1.931
2015 SCImago Journal Rankings: 0.792

 

DC FieldValueLanguage
dc.contributor.authorOhtani, Nen_US
dc.contributor.authorMokler, SMen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:46:55Z-
dc.date.available2012-11-26T08:46:55Z-
dc.date.issued1993en_US
dc.identifier.citationSurface Science, 1993, v. 284 n. 3, p. 305-314en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://hdl.handle.net/10722/174695-
dc.description.abstractGe segregation during silicon gas source molecular beam epitaxy (Si-GSMBE) has been studied by in situ growth rate measurements using reflection-high-energy-electron diffraction (RHEED) intensity oscillations. Growth rate of Si on Si1 - xGex gradually decreases to the Si homoepitaxial growth rate, which is attributed to Ge surface segregation at the growth interface. This segregation has been modelled using a mass balance equation and it has been found that the observed growth rate enhancement can be used as a direct measure of the Ge segregation. Using this novel in situ technique, concentration dependence of Ge segregation was studied, and it was found that the segregation decay curve is nonlinear, resulting in two segregation regimes dependent upon the Ge concentration, consistent with previous studies. Temperature dependence studies reveal that surface hydrogen, which is produced by the dissociation of Si2H6 and GeH4 on the surface during growth, may act as a growth controlling surfactant, and comparison with solid source growth results suggests that it significantly suppresses the Ge segregation, leading to a more precise control of the interface. Finally, the thermal stability of the segregated surfaces was examined. Growth interruption and annealing during Si overlayer growth on Si1 - xGex resulted in a small increase in the surface Ge concentration, which may be ascribed to the outdiffusion effect of Ge from the near surface region. © 1993.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/suscen_US
dc.relation.ispartofSurface Scienceen_US
dc.titleRHEED investigation of Ge surface segregation during gas source MBE of Si Si1 - xGex heterostructuresen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0027553036en_US
dc.identifier.volume284en_US
dc.identifier.issue3en_US
dc.identifier.spage305en_US
dc.identifier.epage314en_US
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridOhtani, N=7103392778en_US
dc.identifier.scopusauthoridMokler, SM=6603054444en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

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