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Article: In situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1-xGex alloys on Si(100) surfaces

TitleIn situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1-xGex alloys on Si(100) surfaces
Authors
Issue Date1992
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1992, v. 61 n. 21, p. 2548-2550 How to Cite?
AbstractUsing reflection-high-energy-electron-diffraction intensity oscillations the growth rate of Si1-xGex alloys at various compositions and different growth temperatures has been studied in situ. It was found that the growth rate shows a strong dependence on GeH4 flux at low temperatures (T<600°C), while at high temperatures (T≳600°C) the growth rate is nearly independent of the GeH4 flux but proportional to the incident Si2H6 beam flux. In addition to the enhanced growth rate, a lower activation energy is observed in the low temperature region when compared to Si homoepitaxy from Si2H 6. This suggests that surface germanium atoms act as good sites for hydrogen removal which is known to inhibit Si growth from hydride sources at low temperatures. Above 600°C, however, surface hydrogen is desorbed thermally and the addition of GeH4 has little effect on the growth rate.
Persistent Identifierhttp://hdl.handle.net/10722/174643
ISSN
2015 Impact Factor: 3.142
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMokler, SMen_US
dc.contributor.authorOhtani, Nen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:46:40Z-
dc.date.available2012-11-26T08:46:40Z-
dc.date.issued1992en_US
dc.identifier.citationApplied Physics Letters, 1992, v. 61 n. 21, p. 2548-2550en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/174643-
dc.description.abstractUsing reflection-high-energy-electron-diffraction intensity oscillations the growth rate of Si1-xGex alloys at various compositions and different growth temperatures has been studied in situ. It was found that the growth rate shows a strong dependence on GeH4 flux at low temperatures (T<600°C), while at high temperatures (T≳600°C) the growth rate is nearly independent of the GeH4 flux but proportional to the incident Si2H6 beam flux. In addition to the enhanced growth rate, a lower activation energy is observed in the low temperature region when compared to Si homoepitaxy from Si2H 6. This suggests that surface germanium atoms act as good sites for hydrogen removal which is known to inhibit Si growth from hydride sources at low temperatures. Above 600°C, however, surface hydrogen is desorbed thermally and the addition of GeH4 has little effect on the growth rate.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleIn situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1-xGex alloys on Si(100) surfacesen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.108122en_US
dc.identifier.scopuseid_2-s2.0-0001470461en_US
dc.identifier.volume61en_US
dc.identifier.issue21en_US
dc.identifier.spage2548en_US
dc.identifier.epage2550en_US
dc.identifier.isiWOS:A1992JZ02500018-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridMokler, SM=6603054444en_US
dc.identifier.scopusauthoridOhtani, N=7103392778en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

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