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Article: Growth of Si1-xGex heterostructures using gas-source molecular beam epitaxy

TitleGrowth of Si1-xGex heterostructures using gas-source molecular beam epitaxy
Authors
Issue Date1994
Citation
International Journal Of Optoelectronics, 1994, v. 9 n. 2, p. 193-203 How to Cite?
AbstractSi1-xGex/Si heterostructures have been grown using Si gas-source molecular beam epitaxy. Growth from gaseous hydride sources not only provides a clean growth process but also pioneers new processing technologies and hence holds great promise for future applications in Si-based devices. Here, its characteristic advantages over conventional solid source molecular beam epitaxy have been investigated through surface chemistry studies of Si1-xGex growth using reflection high-energy electron diffraction. Surface hydrogen, which is produced by the dissociation of hydride source gases on the surface during growth, gives rise to several interesting effects on the growing surface and has been found to provide an inherent advantage over evaporation sources in providing a more precise control of the interface.
Persistent Identifierhttp://hdl.handle.net/10722/174707
ISSN
2000 Impact Factor: 0.696
2001 SCImago Journal Rankings: 0.160

 

DC FieldValueLanguage
dc.contributor.authorOhtani, Nen_US
dc.contributor.authorMokler, SMen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorZhang, Jen_US
dc.contributor.authorZhang, Xen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:46:58Z-
dc.date.available2012-11-26T08:46:58Z-
dc.date.issued1994en_US
dc.identifier.citationInternational Journal Of Optoelectronics, 1994, v. 9 n. 2, p. 193-203en_US
dc.identifier.issn0952-5432en_US
dc.identifier.urihttp://hdl.handle.net/10722/174707-
dc.description.abstractSi1-xGex/Si heterostructures have been grown using Si gas-source molecular beam epitaxy. Growth from gaseous hydride sources not only provides a clean growth process but also pioneers new processing technologies and hence holds great promise for future applications in Si-based devices. Here, its characteristic advantages over conventional solid source molecular beam epitaxy have been investigated through surface chemistry studies of Si1-xGex growth using reflection high-energy electron diffraction. Surface hydrogen, which is produced by the dissociation of hydride source gases on the surface during growth, gives rise to several interesting effects on the growing surface and has been found to provide an inherent advantage over evaporation sources in providing a more precise control of the interface.en_US
dc.languageengen_US
dc.relation.ispartofInternational Journal of Optoelectronicsen_US
dc.titleGrowth of Si1-xGex heterostructures using gas-source molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0028387048en_US
dc.identifier.volume9en_US
dc.identifier.issue2en_US
dc.identifier.spage193en_US
dc.identifier.epage203en_US
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridOhtani, N=7103392778en_US
dc.identifier.scopusauthoridMokler, SM=6603054444en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridZhang, J=36062542300en_US
dc.identifier.scopusauthoridZhang, X=8521572500en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

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