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Article: Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4

TitleGrowth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4
Authors
Issue Date1993
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgro
Citation
Journal Of Crystal Growth, 1993, v. 127 n. 1-4, p. 467-471 How to Cite?
AbstractThe epitaxial growth of Si and SixGe1-x alloys from molecular beams of gaseous Si (Si2H6) and Ge (GeH4) hydrides on Si(001) substrates (Si-GSMBE) has been studied using reflection high energy electron diffraction (RHEED). Diffraction patterns reveal that Ge deposited on Si results in a Stranski-Krastanow growth mode with a change in surface reconstruction in the two-dimensional (2D) regime from the two-domain Si(001)-(2×1) to a two-domain Si(2×8)-Ge, prior to the onset of three-dimensional (3D) growth. Using the RHEED intensity oscillation technique during alloy growth it is found that at substrate temperatures below 600°C there is an enhancement in growth rate of the alloy above that of pure Si growth from disilane. This phenomenon has been attributed to the increased desorption rate of hydrogen adatoms due to the presence of Ge, which leads to an acceleration of the heterogenous reaction rate. Consistent with this, during growth at substrate temperatures above the desorption rate maximum for hydrogen, 600°C no enhancement of the growth rate due to the addition of GeH4 to the beam flux is observed and the growth rate is dependent upon disilane arrival rate. Reaction kinetics are discussed in terms of Ge concentration in the films and the ratio of GeH4 to Si2H6 in the incident beams under various growth conditions. © 1993.
Persistent Identifierhttp://hdl.handle.net/10722/174705
ISSN
2015 Impact Factor: 1.462
2015 SCImago Journal Rankings: 0.752

 

DC FieldValueLanguage
dc.contributor.authorMokler, SMen_US
dc.contributor.authorOhtani, Nen_US
dc.contributor.authorXie, MHen_US
dc.contributor.authorZhang, Xen_US
dc.contributor.authorJoyce, BAen_US
dc.date.accessioned2012-11-26T08:46:58Z-
dc.date.available2012-11-26T08:46:58Z-
dc.date.issued1993en_US
dc.identifier.citationJournal Of Crystal Growth, 1993, v. 127 n. 1-4, p. 467-471en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://hdl.handle.net/10722/174705-
dc.description.abstractThe epitaxial growth of Si and SixGe1-x alloys from molecular beams of gaseous Si (Si2H6) and Ge (GeH4) hydrides on Si(001) substrates (Si-GSMBE) has been studied using reflection high energy electron diffraction (RHEED). Diffraction patterns reveal that Ge deposited on Si results in a Stranski-Krastanow growth mode with a change in surface reconstruction in the two-dimensional (2D) regime from the two-domain Si(001)-(2×1) to a two-domain Si(2×8)-Ge, prior to the onset of three-dimensional (3D) growth. Using the RHEED intensity oscillation technique during alloy growth it is found that at substrate temperatures below 600°C there is an enhancement in growth rate of the alloy above that of pure Si growth from disilane. This phenomenon has been attributed to the increased desorption rate of hydrogen adatoms due to the presence of Ge, which leads to an acceleration of the heterogenous reaction rate. Consistent with this, during growth at substrate temperatures above the desorption rate maximum for hydrogen, 600°C no enhancement of the growth rate due to the addition of GeH4 to the beam flux is observed and the growth rate is dependent upon disilane arrival rate. Reaction kinetics are discussed in terms of Ge concentration in the films and the ratio of GeH4 to Si2H6 in the incident beams under various growth conditions. © 1993.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jcrysgroen_US
dc.relation.ispartofJournal of Crystal Growthen_US
dc.titleGrowth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4en_US
dc.typeArticleen_US
dc.identifier.emailXie, MH: mhxie@hku.hken_US
dc.identifier.authorityXie, MH=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0027904617en_US
dc.identifier.volume127en_US
dc.identifier.issue1-4en_US
dc.identifier.spage467en_US
dc.identifier.epage471en_US
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridMokler, SM=6603054444en_US
dc.identifier.scopusauthoridOhtani, N=7103392778en_US
dc.identifier.scopusauthoridXie, MH=7202255416en_US
dc.identifier.scopusauthoridZhang, X=8521572500en_US
dc.identifier.scopusauthoridJoyce, BA=7102210065en_US

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