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Browsing by Author Liu, L
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Showing results 209 to 228 of 459
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Title
Author(s)
Issue Date
Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate
Journal:
IEEE Transactions on Electron Devices
Cheng, ZX
Liu, L
Xu, JP
Huang, Y
Lai, PT
Tang, WM
2016
Improved 1 km resolution PM2.5 estimates across China using enhanced space–time extremely randomized trees
Journal:
Atmospheric Chemistry and Physics
Wei, J
Li, Z
Cribb, M
Huang, W
Xue, W
Sun, L
Guo, J
Peng, Y
Li, J
Lyapustin, A
Liu, L
Wu, H
Song, Y
2020
Improved characteristics for MOHOS memory with oxygen-rich GdO as charge storage layer annealed by NH3
Journal:
Applied Physics A: materials science & processing
Liu, L
Xu, JP
Chen, JX
Lai, PT
2014
Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films
Journal:
Applied Physics Letters
Huang, XD
Liu, L
Xu, JP
Lai, PT
2011
Improved Charge-Trapping Properties of TiON/HfON Dual Charge Storage Layer by Tapered Band Structure
Journal:
Applied Physics Letters
Liu, L
Xu, J
Chen, JX
Ji, F
Lai, PT
2012
Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric
Journal:
Applied Physics Express
ZHAO, X
XU, J
LIU, L
Lai, PT
TANG, WM
2019
Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric
Journal:
IEEE Transactions on Electron Devices
Wen, M
Xu, JP
Liu, L
Lai, PT
Tang, WM
2017
Improved Electrical Properties and Reliability of GaAs Metal–Oxide–Semiconductor Capacitor by Using LaAlON Passivation Layer
Journal:
Physica Status Solidi - Rapid Research Letters
LIU, L
Choi, HW
Xu, JP
Lai, PT
2017
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Zhao, X
Xu, JP
Liu, L
Lai, PT
Tang, WM
2019
Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric
Journal:
Applied Surface Science
SONG, X
XU, J
LIU, L
Lai, PT
TANG, WM
2019
Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer
Journal:
IEEE Transactions on Device and Materials Reliability
Lu, HH
Xu, JP
Liu, L
Lai, PT
Tang, WM
2017
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer
Journal:
IEEE Transactions on Electron Devices
Lu, HH
Liu, L
Xu, JP
Lai, PT
Tang, WM
2017
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Journal:
Applied Physics Letters
Cheng, ZX
Xu, JP
Liu, L
Huang, Y
Lai, PT
Tang, WM
2016
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer
Journal:
Applied Physics Letters
HUANG, Y
XU, JP
LIU, L
CHENG, ZX
Lai, PT
TANG, WM
2017
Improved interfacial and electrical properties of Ge-based metal-oxide-semiconductor capacitor with LaTaON passivation layer
Journal:
IEEE Transactions on Electron Devices
Ji, FENG
Xu, J
Huang, Y
Liu, L
Lai, PT
2014
Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation
Journal:
Applied Physics Letters
Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment
Journal:
Applied Surface Science
Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM
2019
Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric
Journal:
IEEE Electron Device Letters
Zhao, XY
Xu, JP
Liu, L
Lai, PT
Tang, WM
2020
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer
Journal:
Microelectronics Reliability
Lu, HH
Xu, JP
Liu, L
Wang, LS
Lai, PT
Tang, WM
2016
Improved Memory Characteristics by NH3-Nitrided GdO as Charge Storage Layer for Nonvolatile Memory Applications
Journal:
Applied Physics Letters
Liu, L
Xu, J
Ji, F
Chen, JX
Lai, PT
2012
