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Article: Improved interfacial and electrical properties of Ge-based metal-oxide-semiconductor capacitor with LaTaON passivation layer

TitleImproved interfacial and electrical properties of Ge-based metal-oxide-semiconductor capacitor with LaTaON passivation layer
Authors
Issue Date2014
PublisherIEEE.
Citation
IEEE Transactions on Electron Devices, 2014, v. 61 n. 11, p. 3608-3612 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/218747

 

DC FieldValueLanguage
dc.contributor.authorJi, FENG-
dc.contributor.authorXu, J-
dc.contributor.authorHuang, Y-
dc.contributor.authorLiu, L-
dc.contributor.authorLai, PT-
dc.date.accessioned2015-09-18T06:52:17Z-
dc.date.available2015-09-18T06:52:17Z-
dc.date.issued2014-
dc.identifier.citationIEEE Transactions on Electron Devices, 2014, v. 61 n. 11, p. 3608-3612-
dc.identifier.urihttp://hdl.handle.net/10722/218747-
dc.languageeng-
dc.publisherIEEE.-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.rightsIEEE Trans. Electron Devices. Copyright © IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.titleImproved interfacial and electrical properties of Ge-based metal-oxide-semiconductor capacitor with LaTaON passivation layer-
dc.typeArticle-
dc.identifier.emailLiu, L: liulu@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityXu, J=rp00197-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/TED.2014.2356597-
dc.identifier.hkuros253930-
dc.identifier.volume61-
dc.identifier.issue11-
dc.identifier.spage3608-
dc.identifier.epage3612-

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