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Article: Improved interfacial and electrical properties of Ge-based metal-oxide-semiconductor capacitor with LaTaON passivation layer
Title | Improved interfacial and electrical properties of Ge-based metal-oxide-semiconductor capacitor with LaTaON passivation layer |
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Authors | |
Keywords | Ge metal-oxide-semiconductor (Ge MOS) high-k dielectric interface properties LaTaON passivation layer |
Issue Date | 2014 |
Publisher | IEEE. |
Citation | IEEE Transactions on Electron Devices, 2014, v. 61 n. 11, p. 3608-3612 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/218747 |
ISSN | 2023 Impact Factor: 2.9 2023 SCImago Journal Rankings: 0.785 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ji, FENG | - |
dc.contributor.author | Xu, J | - |
dc.contributor.author | Huang, Y | - |
dc.contributor.author | Liu, L | - |
dc.contributor.author | Lai, PT | - |
dc.date.accessioned | 2015-09-18T06:52:17Z | - |
dc.date.available | 2015-09-18T06:52:17Z | - |
dc.date.issued | 2014 | - |
dc.identifier.citation | IEEE Transactions on Electron Devices, 2014, v. 61 n. 11, p. 3608-3612 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10722/218747 | - |
dc.language | eng | - |
dc.publisher | IEEE. | - |
dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
dc.subject | Ge metal-oxide-semiconductor (Ge MOS) | - |
dc.subject | high-k dielectric | - |
dc.subject | interface properties | - |
dc.subject | LaTaON | - |
dc.subject | passivation layer | - |
dc.title | Improved interfacial and electrical properties of Ge-based metal-oxide-semiconductor capacitor with LaTaON passivation layer | - |
dc.type | Article | - |
dc.identifier.email | Liu, L: liulu@hku.hk | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Xu, J=rp00197 | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/TED.2014.2356597 | - |
dc.identifier.scopus | eid_2-s2.0-84908461721 | - |
dc.identifier.hkuros | 253930 | - |
dc.identifier.volume | 61 | - |
dc.identifier.issue | 11 | - |
dc.identifier.spage | 3608 | - |
dc.identifier.epage | 3612 | - |
dc.identifier.eissn | 1557-9646 | - |
dc.identifier.isi | WOS:000344544200005 | - |
dc.identifier.issnl | 0018-9383 | - |