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Article: Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric

TitleImproved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric
Authors
ZHAO, XXU, JLIU, LLai, PTTANG, WM
KeywordsAluminum
Carrier mobility
Contact resistance
Gate dielectrics
Hafnium oxides
Issue Date2019
PublisherIOP Publishing, published in association with Japan Society of Applied Physics. The Journal's web site is located at http://iopscience.iop.org/1882-0786/
Citation
Applied Physics Express, 2019, v. 12 n. 6, p. article no. 064005 How to Cite?
DOI: http://dx.doi.org/10.7567/1882-0786/ab1fa7
AbstractThe effects of incorporating Al into HfO2 as gate dielectric on the back-gated MoS2 transistor are investigated. Hf0.5Al0.5O as gate dielectric exhibits excellent electrical characteristics: on/off ratio of 1.8 × 107, carrier mobility of 49.3 cm2/(V centerdot s), subthreshold swing of 118 mV dec−1, interface-state density of 2.3 × 1012 eV−1 cm−2, due to the Al incorporation into the HfO2 can passivate the defective states induced by oxygen vacancies and improve the dielectric densification and uniformity to obtain an excellent MoS2/Hf1-x Al x O interface. Besides, the intrinsic carrier mobility of 100 cm2 V−1 s−1 and contact resistance of 11.1 kΩ/μm indicates that the contact resistance is a main factor limiting the mobility.
Descriptioneid_2-s2.0-85069531096link_to_subscribed_fulltext
Persistent Identifierhttp://hdl.handle.net/10722/277978
ISSN
1882-0778
2021 Impact Factor: 2.819
2020 SCImago Journal Rankings: 0.911
ISI Accession Number ID
WOS:000468503400001

 

DC FieldValueLanguage
dc.contributor.authorZHAO, X-
dc.contributor.authorXU, J-
dc.contributor.authorLIU, L-
dc.contributor.authorLai, PT-
dc.contributor.authorTANG, WM-
dc.date.accessioned2019-10-04T08:05:04Z-
dc.date.available2019-10-04T08:05:04Z-
dc.date.issued2019-
dc.identifier.citationApplied Physics Express, 2019, v. 12 n. 6, p. article no. 064005-
dc.identifier.issn1882-0778-
dc.identifier.urihttp://hdl.handle.net/10722/277978-
dc.descriptioneid_2-s2.0-85069531096link_to_subscribed_fulltext-
dc.description.abstractThe effects of incorporating Al into HfO2 as gate dielectric on the back-gated MoS2 transistor are investigated. Hf0.5Al0.5O as gate dielectric exhibits excellent electrical characteristics: on/off ratio of 1.8 × 107, carrier mobility of 49.3 cm2/(V centerdot s), subthreshold swing of 118 mV dec−1, interface-state density of 2.3 × 1012 eV−1 cm−2, due to the Al incorporation into the HfO2 can passivate the defective states induced by oxygen vacancies and improve the dielectric densification and uniformity to obtain an excellent MoS2/Hf1-x Al x O interface. Besides, the intrinsic carrier mobility of 100 cm2 V−1 s−1 and contact resistance of 11.1 kΩ/μm indicates that the contact resistance is a main factor limiting the mobility.-
dc.languageeng-
dc.publisherIOP Publishing, published in association with Japan Society of Applied Physics. The Journal's web site is located at http://iopscience.iop.org/1882-0786/-
dc.relation.ispartofApplied Physics Express-
dc.rightsApplied Physics Express. Copyright © IOP Publishing, published in association with Japan Society of Applied Physics.-
dc.rightsThis is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI].-
dc.subjectAluminum-
dc.subjectCarrier mobility-
dc.subjectContact resistance-
dc.subjectGate dielectrics-
dc.subjectHafnium oxides-
dc.titleImproved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.7567/1882-0786/ab1fa7-
dc.identifier.scopuseid_2-s2.0-85069531096-
dc.identifier.hkuros306913-
dc.identifier.volume12-
dc.identifier.issue6-
dc.identifier.spagearticle no. 064005-
dc.identifier.epagearticle no. 064005-
dc.identifier.isiWOS:000468503400001-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl1882-0778-

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