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Showing results 1 to 9 of 9

	Title	Author(s)	Issue Date
	Deep level defects in 6H silicon carbide induced by particles irradiations Proceeding/Conference:The National Conference of Semiconductor Physics	Ling, FCC Chen, X Gong, M Ge, WK Wang, JN Yang, CL Brauer, G Anwand, W Skorupa, W Beling, CD Fung, SHY Wang, HY Weng, HM	2005
	Determination of the sign of g factors for conduction electrons using time-resolved Kerr rotation Journal:Applied Physics Letters	Yang, CL Dai, J Ge, WK Cui, X	2010
	Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation Journal:Physica B: Condensed Matter	Ling, CC Chen, XD Gong, M Yang, CL Ge, WK Wang, JN	2006
	Influence of the carrier gas on the luminescence of ZnO tetrapod nanowires Journal:Journal of Crystal Growth	Leung, CY Djurišić, AB Leung, YH Ding, L Yang, CL Ge, WK	2006
	Light-induced incandescence of single-walled carbon nanotubes Journal:Journal of Physical Chemistry C	Zeng, H Yang, C Dai, J Cui, X	2008
	Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2 Journal:Physical Review Letters	Chen, XD Yang, CL Gong, M Ge, WK Fung, S Beling, CD Wang, JN Lui, MK Ling, CC	2004
	Magnetoelectric photocurrent generated by direct interband transitions in InGaAs/InAlAs two-dimensional electron gas Journal:Physical Review Letters	Dai, J Lu, HZ Yang, CL Shen, SQ Zhang, FC Cui, X	2010
	Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix Journal:Physical Review B (Condensed Matter and Materials Physics)	Yang, C Cui, X Shen, SQ Xu, Z Ge, W	2009
	Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy Journal:Semiconductor Science and Technology	Lu, L Yan, H Yang, CL Xie, M Wang, Z Wang, J Ge, W	2002

Showing results 1 to 9 of 9