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Article: Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy

TitleStudy of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy
Authors
Issue Date2002
PublisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/sst
Citation
Semiconductor Science And Technology, 2002, v. 17 n. 9, p. 957-960 How to Cite?
AbstractA detailed study of the characteristics of undoped GaN films, grown on either vicinal or nominal flat SiC (0001) substrates by molecular beam epitaxy, has been carried out using photoluminescence and Raman scattering techniques. The 11 K photoluminescence spectra of the GaN film grown on the vicinal SiC (0001) substrate show a strong and sharp near-bandgap peak (full width at half maximum (FWHM) ∼ 16 meV). This feature contrasts with that of the GaN film grown on the nominal flat SiC (0001) substrate where the 11 K photoluminescence spectra exhibit the near-bandgap peak (FWHM ∼ 25 meV) and the intensity is approximately seven times weaker than that of the vicinal film sample. The redshift of the near-bandgap peak associated with excitons bound to shallow donors is related to the stress caused by both the lattice mismatch and the thermal expansion coefficient difference between GaN and SiC substrates. The measured thermal activation energy of the shallow donor of 33.4 meV is determined by using an Arrhenius plot of the near-bandgap luminescence versus 1/T from the slope of the graph at high temperature. The temperature dependence of the FWHM of the near-bandgap luminescence has also been studied. The Raman scattering measurements from the vicinal film reveal that the E 2 phonon peak is strengthened and the A 1(LO) phonon peak is shifted towards the low-frequency side with enhanced intensity, in comparison to that from the nominal flat film, suggesting a reduction in the density of defects and a lower free carrier concentration in the vicinal GaN film.
Persistent Identifierhttp://hdl.handle.net/10722/80446
ISSN
2015 Impact Factor: 2.098
2015 SCImago Journal Rankings: 0.676
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLu, Len_HK
dc.contributor.authorYan, Hen_HK
dc.contributor.authorYang, CLen_HK
dc.contributor.authorXie, Men_HK
dc.contributor.authorWang, Zen_HK
dc.contributor.authorWang, Jen_HK
dc.contributor.authorGe, Wen_HK
dc.date.accessioned2010-09-06T08:06:32Z-
dc.date.available2010-09-06T08:06:32Z-
dc.date.issued2002en_HK
dc.identifier.citationSemiconductor Science And Technology, 2002, v. 17 n. 9, p. 957-960en_HK
dc.identifier.issn0268-1242en_HK
dc.identifier.urihttp://hdl.handle.net/10722/80446-
dc.description.abstractA detailed study of the characteristics of undoped GaN films, grown on either vicinal or nominal flat SiC (0001) substrates by molecular beam epitaxy, has been carried out using photoluminescence and Raman scattering techniques. The 11 K photoluminescence spectra of the GaN film grown on the vicinal SiC (0001) substrate show a strong and sharp near-bandgap peak (full width at half maximum (FWHM) ∼ 16 meV). This feature contrasts with that of the GaN film grown on the nominal flat SiC (0001) substrate where the 11 K photoluminescence spectra exhibit the near-bandgap peak (FWHM ∼ 25 meV) and the intensity is approximately seven times weaker than that of the vicinal film sample. The redshift of the near-bandgap peak associated with excitons bound to shallow donors is related to the stress caused by both the lattice mismatch and the thermal expansion coefficient difference between GaN and SiC substrates. The measured thermal activation energy of the shallow donor of 33.4 meV is determined by using an Arrhenius plot of the near-bandgap luminescence versus 1/T from the slope of the graph at high temperature. The temperature dependence of the FWHM of the near-bandgap luminescence has also been studied. The Raman scattering measurements from the vicinal film reveal that the E 2 phonon peak is strengthened and the A 1(LO) phonon peak is shifted towards the low-frequency side with enhanced intensity, in comparison to that from the nominal flat film, suggesting a reduction in the density of defects and a lower free carrier concentration in the vicinal GaN film.en_HK
dc.languageengen_HK
dc.publisherInstitute of Physics Publishing. The Journal's web site is located at http://www.iop.org/journals/ssten_HK
dc.relation.ispartofSemiconductor Science and Technologyen_HK
dc.titleStudy of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0268-1242&volume=17&spage=957&epage=960&date=2002&atitle=Study+of+GaN+thin+films+grown+on+vicinal+SiC+(0001)+substrates+by+molecular+beam+epitaxyen_HK
dc.identifier.emailYang, CL: yangchl@HKUCC.hku.hken_HK
dc.identifier.emailXie, M: mhxie@hku.hken_HK
dc.identifier.authorityYang, CL=rp00824en_HK
dc.identifier.authorityXie, M=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/0268-1242/17/9/310en_HK
dc.identifier.scopuseid_2-s2.0-0036713988en_HK
dc.identifier.hkuros77192en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0036713988&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume17en_HK
dc.identifier.issue9en_HK
dc.identifier.spage957en_HK
dc.identifier.epage960en_HK
dc.identifier.isiWOS:000178307600013-
dc.publisher.placeUnited Kingdomen_HK
dc.identifier.scopusauthoridLu, L=7403963183en_HK
dc.identifier.scopusauthoridYan, H=36984687400en_HK
dc.identifier.scopusauthoridYang, CL=7407022337en_HK
dc.identifier.scopusauthoridXie, M=7202255416en_HK
dc.identifier.scopusauthoridWang, Z=36077454600en_HK
dc.identifier.scopusauthoridWang, J=13309941200en_HK
dc.identifier.scopusauthoridGe, W=7103160307en_HK

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