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Article: Magnetoelectric photocurrent generated by direct interband transitions in InGaAs/InAlAs two-dimensional electron gas

TitleMagnetoelectric photocurrent generated by direct interband transitions in InGaAs/InAlAs two-dimensional electron gas
Authors
KeywordsPhysics
Issue Date2010
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 2010, v. 104 n. 24, article no. 246601 How to Cite?
AbstractWe report the observation of magnetoelectric photocurrent generated via direct interband transitions in an InGaAs/InAlAs two-dimensional electron gas by a linearly polarized incident light. The electric current is proportional to the in-plane magnetic field, which unbalances the velocities of the photoexcited carriers with opposite spins and consequently generates the electric current from a hidden spin photocurrent. The spin photocurrent can be evaluated from the measured electric current, and the conversion coefficient of spin photocurrent to electric current is self-consistently estimated to be 10-3-10 -2 per Tesla. The observed light-polarization dependence of the electric current is well explained by a theoretical model which reveals the wave vector angle dependence of the photoexcited carrier density. © 2010 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/123860
ISSN
2017 Impact Factor: 8.839
2015 SCImago Journal Rankings: 3.731
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7013/08P
HKU 7041/07P
HKU 10/CRF/08
Hong Kong UGCAOE/P-04/08
Funding Information:

This work was supported by the Research Grant Council of Hong Kong under Grants No. HKU 7013/08P, No. HKU 7041/07P, No. HKU 10/CRF/08, and Hong Kong UGC Grant No. AOE/P-04/08.

References
Grants
Errata

 

DC FieldValueLanguage
dc.contributor.authorDai, Jen_HK
dc.contributor.authorLu, HZen_HK
dc.contributor.authorYang, CLen_HK
dc.contributor.authorShen, SQen_HK
dc.contributor.authorZhang, FCen_HK
dc.contributor.authorCui, Xen_HK
dc.date.accessioned2010-10-05T07:41:41Z-
dc.date.available2010-10-05T07:41:41Z-
dc.date.issued2010en_HK
dc.identifier.citationPhysical Review Letters, 2010, v. 104 n. 24, article no. 246601-
dc.identifier.issn0031-9007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/123860-
dc.description.abstractWe report the observation of magnetoelectric photocurrent generated via direct interband transitions in an InGaAs/InAlAs two-dimensional electron gas by a linearly polarized incident light. The electric current is proportional to the in-plane magnetic field, which unbalances the velocities of the photoexcited carriers with opposite spins and consequently generates the electric current from a hidden spin photocurrent. The spin photocurrent can be evaluated from the measured electric current, and the conversion coefficient of spin photocurrent to electric current is self-consistently estimated to be 10-3-10 -2 per Tesla. The observed light-polarization dependence of the electric current is well explained by a theoretical model which reveals the wave vector angle dependence of the photoexcited carrier density. © 2010 The American Physical Society.en_HK
dc.languageeng-
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_HK
dc.relation.ispartofPhysical Review Lettersen_HK
dc.rightsCopyright 2010 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevLett.104.246601-
dc.subjectPhysics-
dc.titleMagnetoelectric photocurrent generated by direct interband transitions in InGaAs/InAlAs two-dimensional electron gasen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0031-9007&volume=104&issue=24&spage=246601&epage=&date=2010&atitle=Magnetoelectric+photocurrent+generated+by+direct+interband+transitions+in+InGaAs/InAlAs+two-dimensional+electron+gas-
dc.identifier.emailLu, HZ: luhz@hku.hken_HK
dc.identifier.emailYang, CL: yangchl@HKUCC.hku.hken_HK
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.emailZhang, FC: fuchun@hkucc.hku.hken_HK
dc.identifier.emailCui, X: xdcui@hku.hken_HK
dc.identifier.authorityLu, HZ=rp01599en_HK
dc.identifier.authorityYang, CL=rp00824en_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.identifier.authorityZhang, FC=rp00840en_HK
dc.identifier.authorityCui, X=rp00689en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevLett.104.246601en_HK
dc.identifier.scopuseid_2-s2.0-77953492917en_HK
dc.identifier.hkuros172477-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77953492917&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume104en_HK
dc.identifier.issue24en_HK
dc.identifier.spagearticle no. 246601-
dc.identifier.epagearticle no. 246601-
dc.identifier.eissn1079-7114-
dc.identifier.isiWOS:000278734600001-
dc.publisher.placeUnited Statesen_HK
dc.relation.erratumdoi:10.1103/PhysRevLett.105.259904-
dc.relation.erratumeid:eid_2-s2.0-78650486904-
dc.relation.projectTheory, Modeling, and Simulation of Emerging Electronics-
dc.identifier.scopusauthoridDai, J=36722538500en_HK
dc.identifier.scopusauthoridLu, HZ=24376662200en_HK
dc.identifier.scopusauthoridYang, CL=7407022337en_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK
dc.identifier.scopusauthoridZhang, FC=14012468800en_HK
dc.identifier.scopusauthoridCui, X=10839907500en_HK

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