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Article: Magnetoelectric photocurrent generated by direct interband transitions in InGaAs/InAlAs two-dimensional electron gas

TitleMagnetoelectric photocurrent generated by direct interband transitions in InGaAs/InAlAs two-dimensional electron gas
Authors
KeywordsPhysics
Issue Date2010
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 2010, v. 104 n. 24 How to Cite?
AbstractWe report the observation of magnetoelectric photocurrent generated via direct interband transitions in an InGaAs/InAlAs two-dimensional electron gas by a linearly polarized incident light. The electric current is proportional to the in-plane magnetic field, which unbalances the velocities of the photoexcited carriers with opposite spins and consequently generates the electric current from a hidden spin photocurrent. The spin photocurrent can be evaluated from the measured electric current, and the conversion coefficient of spin photocurrent to electric current is self-consistently estimated to be 10-3-10 -2 per Tesla. The observed light-polarization dependence of the electric current is well explained by a theoretical model which reveals the wave vector angle dependence of the photoexcited carrier density. © 2010 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/123860
ISSN
2015 Impact Factor: 7.645
2015 SCImago Journal Rankings: 3.731
ISI Accession Number ID
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7013/08P
HKU 7041/07P
HKU 10/CRF/08
Hong Kong UGCAOE/P-04/08
Funding Information:

This work was supported by the Research Grant Council of Hong Kong under Grants No. HKU 7013/08P, No. HKU 7041/07P, No. HKU 10/CRF/08, and Hong Kong UGC Grant No. AOE/P-04/08.

References
Grants
Errata

 

DC FieldValueLanguage
dc.contributor.authorDai, Jen_HK
dc.contributor.authorLu, HZen_HK
dc.contributor.authorYang, CLen_HK
dc.contributor.authorShen, SQen_HK
dc.contributor.authorZhang, FCen_HK
dc.contributor.authorCui, Xen_HK
dc.date.accessioned2010-10-05T07:41:41Z-
dc.date.available2010-10-05T07:41:41Z-
dc.date.issued2010en_HK
dc.identifier.citationPhysical Review Letters, 2010, v. 104 n. 24en_HK
dc.identifier.issn0031-9007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/123860-
dc.description.abstractWe report the observation of magnetoelectric photocurrent generated via direct interband transitions in an InGaAs/InAlAs two-dimensional electron gas by a linearly polarized incident light. The electric current is proportional to the in-plane magnetic field, which unbalances the velocities of the photoexcited carriers with opposite spins and consequently generates the electric current from a hidden spin photocurrent. The spin photocurrent can be evaluated from the measured electric current, and the conversion coefficient of spin photocurrent to electric current is self-consistently estimated to be 10-3-10 -2 per Tesla. The observed light-polarization dependence of the electric current is well explained by a theoretical model which reveals the wave vector angle dependence of the photoexcited carrier density. © 2010 The American Physical Society.en_HK
dc.languageeng-
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_HK
dc.relation.ispartofPhysical Review Lettersen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review Letters. Copyright © American Physical Society.-
dc.subjectPhysics-
dc.titleMagnetoelectric photocurrent generated by direct interband transitions in InGaAs/InAlAs two-dimensional electron gasen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0031-9007&volume=104&issue=24&spage=246601&epage=&date=2010&atitle=Magnetoelectric+photocurrent+generated+by+direct+interband+transitions+in+InGaAs/InAlAs+two-dimensional+electron+gas-
dc.identifier.emailLu, HZ: luhz@hku.hken_HK
dc.identifier.emailYang, CL: yangchl@HKUCC.hku.hken_HK
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.emailZhang, FC: fuchun@hkucc.hku.hken_HK
dc.identifier.emailCui, X: xdcui@hku.hken_HK
dc.identifier.authorityLu, HZ=rp01599en_HK
dc.identifier.authorityYang, CL=rp00824en_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.identifier.authorityZhang, FC=rp00840en_HK
dc.identifier.authorityCui, X=rp00689en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevLett.104.246601en_HK
dc.identifier.scopuseid_2-s2.0-77953492917en_HK
dc.identifier.hkuros172477-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77953492917&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume104en_HK
dc.identifier.issue24en_HK
dc.identifier.eissn1079-7114-
dc.identifier.isiWOS:000278734600001-
dc.publisher.placeUnited Statesen_HK
dc.relation.erratumdoi:10.1103/PhysRevLett.105.259904-
dc.relation.erratumeid:eid_2-s2.0-78650486904-
dc.relation.projectTheory, Modeling, and Simulation of Emerging Electronics-
dc.identifier.scopusauthoridDai, J=36722538500en_HK
dc.identifier.scopusauthoridLu, HZ=24376662200en_HK
dc.identifier.scopusauthoridYang, CL=7407022337en_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK
dc.identifier.scopusauthoridZhang, FC=14012468800en_HK
dc.identifier.scopusauthoridCui, X=10839907500en_HK

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