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Article: Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation

TitleElectron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation
Authors
KeywordsAlphabet lines
Electron irradiation
Photoluminescence
Silicon carbide
Issue Date2006
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physb
Citation
Physica B: Condensed Matter, 2006, v. 376-377 n. 1, p. 374-377 How to Cite?
Abstract6H n-type silicon carbide (SiC) samples were irradiated with electrons having energies of 0.2, 0.3, 0.5 and 1.7 MeV and photoluminescence measurements were conducted to study the defects created. The so-called alphabet line (EA) spectrum was created by electron irradiation with electron energy Ee≥0.3MeV. By considering the energy required to displace the C atom and the Si atom in the lattice, the creation of these lines by electron irradiation is associated with the C atom displacement. The process of the introduction of DI by annealing was studied and was found to be different for the 0.3 and the 1.7 MeV electron-irradiated sample. Formation mechanisms for the EA and the DI related centers were discussed. © 2005 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/81000
ISSN
2015 Impact Factor: 1.352
2015 SCImago Journal Rankings: 0.509
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_HK
dc.contributor.authorChen, XDen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorYang, CLen_HK
dc.contributor.authorGe, WKen_HK
dc.contributor.authorWang, JNen_HK
dc.date.accessioned2010-09-06T08:12:38Z-
dc.date.available2010-09-06T08:12:38Z-
dc.date.issued2006en_HK
dc.identifier.citationPhysica B: Condensed Matter, 2006, v. 376-377 n. 1, p. 374-377en_HK
dc.identifier.issn0921-4526en_HK
dc.identifier.urihttp://hdl.handle.net/10722/81000-
dc.description.abstract6H n-type silicon carbide (SiC) samples were irradiated with electrons having energies of 0.2, 0.3, 0.5 and 1.7 MeV and photoluminescence measurements were conducted to study the defects created. The so-called alphabet line (EA) spectrum was created by electron irradiation with electron energy Ee≥0.3MeV. By considering the energy required to displace the C atom and the Si atom in the lattice, the creation of these lines by electron irradiation is associated with the C atom displacement. The process of the introduction of DI by annealing was studied and was found to be different for the 0.3 and the 1.7 MeV electron-irradiated sample. Formation mechanisms for the EA and the DI related centers were discussed. © 2005 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physben_HK
dc.relation.ispartofPhysica B: Condensed Matteren_HK
dc.rightsPhysica B: Condensed Matter. Copyright © Elsevier BV.en_HK
dc.subjectAlphabet linesen_HK
dc.subjectElectron irradiationen_HK
dc.subjectPhotoluminescenceen_HK
dc.subjectSilicon carbideen_HK
dc.titleElectron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiationen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0921-4526&volume=376-377&spage=374&epage=377&date=2006&atitle=Electron+energy+dependence+on+inducing+the+photoluminescence+lines+of+6H-SiC+by+electron+irradiationen_HK
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_HK
dc.identifier.emailYang, CL: yangchl@HKUCC.hku.hken_HK
dc.identifier.authorityLing, CC=rp00747en_HK
dc.identifier.authorityYang, CL=rp00824en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.physb.2005.12.095en_HK
dc.identifier.scopuseid_2-s2.0-33645225623en_HK
dc.identifier.hkuros115063en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33645225623&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume376-377en_HK
dc.identifier.issue1en_HK
dc.identifier.spage374en_HK
dc.identifier.epage377en_HK
dc.identifier.isiWOS:000237329500093-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridLing, CC=13310239300en_HK
dc.identifier.scopusauthoridChen, XD=26642908200en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridYang, CL=7407022337en_HK
dc.identifier.scopusauthoridGe, WK=7103160307en_HK
dc.identifier.scopusauthoridWang, JN=7701333904en_HK

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