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Showing results 1 to 9 of 9
Title
Author(s)
Issue Date
Deep level defects in 6H silicon carbide induced by particles irradiations
Proceeding/Conference:
The National Conference of Semiconductor Physics
Ling, FCC
Chen, X
Gong, M
Ge, WK
Wang, JN
Yang, CL
Brauer, G
Anwand, W
Skorupa, W
Beling, CD
Fung, SHY
Wang, HY
Weng, HM
2005
Determination of the sign of g factors for conduction electrons using time-resolved Kerr rotation
Journal:
Applied Physics Letters
Yang, CL
Dai, J
Ge, WK
Cui, X
2010
Electron energy dependence on inducing the photoluminescence lines of 6H-SiC by electron irradiation
Journal:
Physica B: Condensed Matter
Ling, CC
Chen, XD
Gong, M
Yang, CL
Ge, WK
Wang, JN
2006
Influence of the carrier gas on the luminescence of ZnO tetrapod nanowires
Journal:
Journal of Crystal Growth
Leung, CY
Djurišić, AB
Leung, YH
Ding, L
Yang, CL
Ge, WK
2006
Light-induced incandescence of single-walled carbon nanotubes
Journal:
Journal of Physical Chemistry C
Zeng, H
Yang, C
Dai, J
Cui, X
2008
Low energy electron irradiation induced deep level defects in 6H-SiC: The implication for the microstructure of the deep levels E1/E 2
Journal:
Physical Review Letters
Chen, XD
Yang, CL
Gong, M
Ge, WK
Fung, S
Beling, CD
Wang, JN
Lui, MK
Ling, CC
2004
Magnetoelectric photocurrent generated by direct interband transitions in InGaAs/InAlAs two-dimensional electron gas
Journal:
Physical Review Letters
Dai, J
Lu, HZ
Yang, CL
Shen, SQ
Zhang, FC
Cui, X
2010
Spin relaxation in submonolayer and monolayer InAs structures grown in a GaAs matrix
Journal:
Physical Review B (Condensed Matter and Materials Physics)
Yang, C
Cui, X
Shen, SQ
Xu, Z
Ge, W
2009
Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy
Journal:
Semiconductor Science and Technology
Lu, L
Yan, H
Yang, CL
Xie, M
Wang, Z
Wang, J
Ge, W
2002