Browsing "Mechanical Engineering: Conference papers" by Author li, ming yang

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Showing results 1 to 9 of 9
TitleAuthor(s)Issue Date
 
A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS<inf>2</inf> FET
Proceeding/Conference:International Electron Devices Meeting (IEDM)
Tang, Ying TsanLi, Kai ShinLi, Lain JongLi, Ming YangLin, Chang HsienChen, Yi JuChen, Chun ChiSu, Chuan JungWu, Bo WeiWu, Cheng SanChen, Min ChengShieh, Jia MinYeh, Wen KuanSu, Po ChengWang, TahuiYang, Fu LiangHu, Chenming
2017
 
Circular polarized emission of tungsten diselenide (WSe<inf>2</inf>) atomic layers with plasmonic metasurface
Proceeding/Conference:Conference on Lasers and Electro-Optics
Lin, Hsiang TingChang, Chiao YunCheng, Pi JuLi, Ming YangCheng, Chia ChinChang, Shu WeiLi, Lain JongChu, Chih WeiWei, Pei KuenShih, Min Hsiung
2018
 
Coherent quantum dynamics of excitons in monolayer transition metal dichalcogenides
Proceeding/Conference:Proceedings of SPIE - The International Society for Optical Engineering
Moody, GalanHao, KaiDass, Chandriker KavirSingh, AkshayXu, LixiangTran, KhaChen, Chang HsiaoLi, Ming YangLi, Lain JongClark, GenevieveBerghäuser, GunnarMalic, ErminKnorr, AndreasXu, XiaodongLi, Xiaoqin
2016
 
Experimental observation of chiral phonons in monolayer WSe<inf>2</inf>
Proceeding/Conference:Proceedings of SPIE - The International Society for Optical Engineering
Zhu, HanyuYi, JunLi, Ming YangXiao, JunZhang, LifaYang, Chih WenYang, SuiKaindl, Robert A.Li, Lain JongWang, YuanZhang, Xiang
2019
 
High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping
Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology
Chou, Ang ShengShen, Pin ChunCheng, Chao ChingLu, Li SyuanChueh, Wei ChenLi, Ming YangPitner, GregoryChang, Wen HaoWu, Chih I.Kong, JingLi, Lain JongWong, H. S.Philip
2020
 
Large-area WSe<inf>2</inf> electric double layer transistors on a plastic substrate
Proceeding/Conference:Japanese Journal of Applied Physics
Funahashi, KazumaPu, JiangLi, Ming YangLi, Lain JongIwasa, YoshihiroTakenobu, Taishi
2015
 
MoS<inf>2</inf> U-shape MOSFET with 10 nm channel length and poly-Si source/drain serving as seed for full wafer CVD MoS<inf>2</inf> availability
Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology
Li, Kai ShinWu, Bo WeiLi, Lain JongLi, Ming YangCheng, Chia Chin KevinHsu, Cho LunLin, Chang HsienChen, Yi JuChen, Chun ChiWu, Chien TingChen, Min ChengShieh, Jia MinYeh, Wen KuanChueh, Yu LunYang, Fu LiangHu, Chenming
2016
 
Spectroscopic signature of chiral phonons in 2D materials
Proceeding/Conference:Conference on Lasers and Electro-Optics
Zhu, HanyuYi, JunLi, Ming YangXiao, JunZhang, LifaYang, Chih WenWang, YuanKaindl, Robert A.Li, Lain JongZhang, Xiang
2018
 
TMD FinFET with 4 nm thin body and back gate control for future low power technology
Proceeding/Conference:International Electron Devices Meeting (IEDM)
Chen, Min ChengLi, Kai ShinLi, Lain JongLu, Ang YuLi, Ming YangChang, Yung HuangLin, Chang HsienChen, Yi JuHou, Yun FangChen, Chun ChiWu, Bo WeiWu, Cheng SanYang, IvyLee, Yao JenShieh, Jia MinYeh, Wen KuanShih, Jyun HongSu, Po ChengSachid, Angada B.Wang, TahuiYang, Fu LiangHu, Chenming
2015
Showing results 1 to 9 of 9