Showing results 1 to 6 of 6
Title | Author(s) | Issue Date | |
---|---|---|---|
A mobility model correction for 'atomistic' drift-diffusion simulation Proceeding/Conference:International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | 2011 | ||
Analysis of silicon dioxide interface transition region in MOS structures Proceeding/Conference:2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 | 2007 | ||
From ab initio properties of the Si-SiO2 interface, to electrical characteristics of metal-oxide-semiconductor devices Proceeding/Conference:Journal of Physics: Conference Series | 2010 | ||
Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings | 2013 | ||
New reliability mechanisms in memory design for sub-22nm technologies Proceeding/Conference:Proceedings of the 2011 IEEE 17th International On-Line Testing Symposium, IOLTS 2011 | 2011 | ||
On the sub-nm EOT scaling of high-κ gate stacks Proceeding/Conference:ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon | 2008 |