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Conference Paper: Interplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology

TitleInterplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology
Authors
KeywordsBTI degradation
atomistic simulation
compact modelling
oxide reliability
Issue Date2013
Citation
IEEE International Reliability Physics Symposium Proceedings, 2013, p. 3A.2.1-3A.2.5 How to Cite?
AbstractIn this paper we present a reliability simulation framework from atomistic simulations up to circuit simulations, including traps interactions with variability sources. Trapping and detrapping dynamics are reproduced by a kinetic Monte-Carlo engine, which enables oxide degradation simulations such as BTI and RTN phenomenon on large ensembles of atomistic devices. Based on these results compact models are extracted and circuit lifetime projections are derived. © 2013 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221347
ISSN
2020 SCImago Journal Rankings: 0.380

 

DC FieldValueLanguage
dc.contributor.authorGerrer, L.-
dc.contributor.authorAmoroso, S. M.-
dc.contributor.authorAsenov, P.-
dc.contributor.authorDing, J.-
dc.contributor.authorCheng, B.-
dc.contributor.authorAdamu-Lema, F.-
dc.contributor.authorMarkov, S.-
dc.contributor.authorAsenov, A.-
dc.contributor.authorReid, D.-
dc.contributor.authorMillar, C.-
dc.contributor.authorAsenov, A.-
dc.date.accessioned2015-11-18T06:09:04Z-
dc.date.available2015-11-18T06:09:04Z-
dc.date.issued2013-
dc.identifier.citationIEEE International Reliability Physics Symposium Proceedings, 2013, p. 3A.2.1-3A.2.5-
dc.identifier.issn1541-7026-
dc.identifier.urihttp://hdl.handle.net/10722/221347-
dc.description.abstractIn this paper we present a reliability simulation framework from atomistic simulations up to circuit simulations, including traps interactions with variability sources. Trapping and detrapping dynamics are reproduced by a kinetic Monte-Carlo engine, which enables oxide degradation simulations such as BTI and RTN phenomenon on large ensembles of atomistic devices. Based on these results compact models are extracted and circuit lifetime projections are derived. © 2013 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE International Reliability Physics Symposium Proceedings-
dc.subjectBTI degradation-
dc.subjectatomistic simulation-
dc.subjectcompact modelling-
dc.subjectoxide reliability-
dc.titleInterplay between statistical reliability and variability: A comprehensive transistor-to-circuit simulation technology-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IRPS.2013.6531972-
dc.identifier.scopuseid_2-s2.0-84880982276-
dc.identifier.spage3A.2.1-
dc.identifier.epage3A.2.5-
dc.identifier.issnl1541-7026-

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