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TitleAuthor(s)Issue Date
 
Improved performance of pentacene OTFTs with HfLaO gate dielectric by using fluorination and nitridation
Journal:IEEE Transactions on Device and Materials Reliability
Deng, LFLiu, YRChoi, HWChe, CMLai, PT
2012
 
Density profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H-SiC(0001)
Journal:Applied Physics Letters
Hazra, SChakraborty, SLai, PT
2004
 
Influence of backsurface argon bombardment on SiO2-Si interface characteristics
Journal:Applied Physics Letters
Lai, PTHuang, MQZeng, XZeng, SHLi, GQ
1996
 
Effects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal–oxide–semiconductor system
Journal:Applied Physics Letters
Lai, PTChakraborty, SChan, CLCheng, YC
2000
 
Effects of chemical composition on humidity sensitivity of Al/BaTiO3/Si structure
Journal:Applied Physics Letters
Li, GQLai, PTZeng, SHHuang, MQLiu, BY
1995
 
Evidence of swelling of SiO 2 upon thermal annealing
Journal:Applied Physics Letters
Banerjee, SChakraborty, SLai, PT
2002
 
Enhanced off-state leakage currents in n-channel MOSFET's with N2O-grown gate dielectric
Journal:IEEE Electron Device Letters
Xu, ZLai, PTNg, WT
1995
 
Mobility improvement of n-MOSFET's with nitrided gate oxide by backsurface Ar+ bombardment
Journal:IEEE Electron Device Letters
Lai, PTXu, ZengLi, GQNg, WT
1995
 
Quality improvement of low-pressure chemical-vapor-deposited oxide by N2O nitridation
Journal:Applied Physics Letters
Lai, PTXu, JLo, HBCheng, YC
1997
 
A study of various oxide/silicon interfaces by Ar + backsurface bombardment
Journal:Journal of Applied Physics
Lai, PTLi, GQHuang, MQZeng, SHCheng, YC
1999
 
1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses
Journal:Journal of Applied Physics
Xu, JPLai, PTCheng, YC
1999
 
Improved interface properties of p-type 6H–SiC/SiO2 system by NH3 pretreatment
Journal:Applied Physics Letters
Xu, JPLai, PTChan, CLCheng, YC
2000
 
Efficient white and red light emission from GaN/tris-(8-hydroxyquinolato) aluminum/platinum(II) meso-tetrakis(pentafluorophenyl) porphyrin hybrid light-emitting diodes
Journal:Applied Physics Letters
Xiang, HFYu, SCChe, CMLai, PT
2003
 
Correlation between hot-carrier-induced interface states and GIDL current increase in N-MOSFET's
Journal:IEEE Transactions on Electron Devices
Lai, PTXu, JPWong, WMLo, HBCheng, YC
1998
 
Analysis on accuracy of charge-pumping measurement with gate sawtooth pulses
Journal:IEEE Transactions on Electron Devices
Lai, PTXu, JPPoek, CKCheng, YC
1998
 
A novel technique of N2O-treatment on NH3-nitrided oxide as gate dielectric for nMOS transistors
Journal:IEEE Transactions on Electron Devices
Zeng, XLai, PTNg, WT
1996
 
AC hot-carrier-induced degradation in NMOSFET's with N 2O-based gate dielectrics
Journal:IEEE Electron Device Letters
Zeng, XLai, PTNg, WT
1997
 
Effects of wet N 2O oxidation on interface properties of 6H-SiC MOS capacitors
Journal:IEEE Electron Device Letters
Lai, PTXu, JPChan, CL
2002
 
Improved high-field reliability for a SiC metal-oxide-semiconductor device by the incorporation of nitrogen into its HfTiO gate dielectric
Journal:Journal of Applied Physics
Lin, LMLai, PT
2007
 
Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer
Journal:Applied Physics Letters
Xu, JPJi, FLi, CXLai, PTGuan, JGLiu, YR
2007
 
Electrical properties of HfTiON gate-dielectric metal-oxide-semiconductor capacitors with different Si-surface nitridations
Journal:Applied Physics Letters
Ji, FXu, JPLai, PTLi, CXGuan, JG
2007
 
Suppressed growth of unstable low-fr GeOx interlayer in Ge metal-oxide-semiconductor capacitor with high-k gate dielectric by annealing in water vapor
Journal:Applied Physics Letters
Zou, XXu, JPLi, CXLai, PT
2007
 
Improved performance of OLEDs with ITO surface treatments
Journal:Thin Solid Films
Li, CNKwong, CYDjurišić, ABLai, PTChui, PCChan, WKLiu, SY
2005
 
Efficiency and stability of different tris(8-hydroxyquinoline) aluminium (Alq3) derivatives in OLED applications
Journal:Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Kwong, CYDjurišić, ABChoy, WCHLi, DXie, MHChan, WKCheah, KWLai, PTChui, PC
2005
 
Indium tin oxide surface treatments for improvement of organic light-emitting diode performance
Journal:Applied Physics A: Materials Science and Processing
Li, CNDjurišić, ABKwong, CYLai, PTChan, WKLiu, SY
2005