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Article: Enhanced off-state leakage currents in n-channel MOSFET's with N2O-grown gate dielectric

TitleEnhanced off-state leakage currents in n-channel MOSFET's with N2O-grown gate dielectric
Authors
Xu, ZLai, PTNg, WT
Issue Date1995
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
IEEE Electron Device Letters, 1995, v. 16 n. 10, p. 436-438 How to Cite?
DOI: http://dx.doi.org/10.1109/55.464809
AbstractThis paper reports on the off-state drain (GIDL) and gate current (Ig) characteristics of n-channel MOSFETs using thin thermal oxide (OX), N2O-nitrided oxide (N2ON), and N2O-grown oxide (N20G) as gate dielectrics. Important phenomena observed in N20G devices are enhanced GIDL and Ig in the low-field region as compared to the OX and N20N devices. They are attributed to heavy-nitridation-induced junction leakage and shallow-electron-trap-assisted tunneling mechanisms, respectively. Therefore, N2ON oxide is superior to N20G oxide in leakage-sensitive applications.
Persistent Identifierhttp://hdl.handle.net/10722/42723
ISSN
0741-3106
2021 Impact Factor: 4.816
2020 SCImago Journal Rankings: 1.337
ISI Accession Number ID
WOS:A1995RW04900007

 

DC FieldValueLanguage
dc.contributor.authorXu, Zen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorNg, WTen_HK
dc.date.accessioned2007-03-23T04:30:54Z-
dc.date.available2007-03-23T04:30:54Z-
dc.date.issued1995en_HK
dc.identifier.citationIEEE Electron Device Letters, 1995, v. 16 n. 10, p. 436-438en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42723-
dc.description.abstractThis paper reports on the off-state drain (GIDL) and gate current (Ig) characteristics of n-channel MOSFETs using thin thermal oxide (OX), N2O-nitrided oxide (N2ON), and N2O-grown oxide (N20G) as gate dielectrics. Important phenomena observed in N20G devices are enhanced GIDL and Ig in the low-field region as compared to the OX and N20N devices. They are attributed to heavy-nitridation-induced junction leakage and shallow-electron-trap-assisted tunneling mechanisms, respectively. Therefore, N2ON oxide is superior to N20G oxide in leakage-sensitive applications.en_HK
dc.format.extent264187 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Letters-
dc.rights©1995 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.titleEnhanced off-state leakage currents in n-channel MOSFET's with N2O-grown gate dielectricen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0741-3106&volume=16&issue=10&spage=436&epage=438&date=1995&atitle=Enhanced+off-state+leakage+currents+in+n-channel+MOSFETs+with+N2O-grown+gate+dielectricen_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/55.464809-
dc.identifier.scopuseid_2-s2.0-0029393094-
dc.identifier.hkuros12527-
dc.identifier.isiWOS:A1995RW04900007-
dc.publisher.placeUnited States-
dc.identifier.scopusauthoridXu, Zeng=7405429249-
dc.identifier.scopusauthoridNg, WT=7401613512-
dc.identifier.scopusauthoridLai, PT=7202946460-
dc.identifier.issnl0741-3106-

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