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Article: Density profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H-SiC(0001)
Title | Density profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H-SiC(0001) |
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Authors | |
Keywords | Physics engineering |
Issue Date | 2004 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 2004, v. 85 n. 23, p. 5580-5582 How to Cite? |
Abstract | Thermally grown silicon oxide films on p-typs 6H-silicon carbide substrate under different oxidation and nitridation conditions have been characterized by x-ray reflectivity technique. An electron density profile obtained from the analysis of the x-ray reflectivity data shows that the thickness, density of the oxide film, and structure of the oxide-SiC interface strongly depend on the different growth conditions. In particular, the density of the oxide film for all samples other than that grown in NO is found to be much lower and also not fixed within. It is maximum at the interface and gradually decreases toward the top in all samples except for the sample grown in O2 followed by NO nitridation. For the latter, a very low density at the interface region has been observed. The sample grown in NO shows the best performance in capacitance-voltage characteristic and reliability studies suggesting that the bad performance of the oxide grown on the p-type SiC system as metal-oxide-semiconductor devices, is mainly linked to the low-density oxide film and can be overcome under proper growth condition. © 2004 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/42103 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Hazra, S | en_HK |
dc.contributor.author | Chakraborty, S | en_HK |
dc.contributor.author | Lai, PT | en_HK |
dc.date.accessioned | 2007-01-08T02:29:03Z | - |
dc.date.available | 2007-01-08T02:29:03Z | - |
dc.date.issued | 2004 | en_HK |
dc.identifier.citation | Applied Physics Letters, 2004, v. 85 n. 23, p. 5580-5582 | - |
dc.identifier.issn | 0003-6951 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/42103 | - |
dc.description.abstract | Thermally grown silicon oxide films on p-typs 6H-silicon carbide substrate under different oxidation and nitridation conditions have been characterized by x-ray reflectivity technique. An electron density profile obtained from the analysis of the x-ray reflectivity data shows that the thickness, density of the oxide film, and structure of the oxide-SiC interface strongly depend on the different growth conditions. In particular, the density of the oxide film for all samples other than that grown in NO is found to be much lower and also not fixed within. It is maximum at the interface and gradually decreases toward the top in all samples except for the sample grown in O2 followed by NO nitridation. For the latter, a very low density at the interface region has been observed. The sample grown in NO shows the best performance in capacitance-voltage characteristic and reliability studies suggesting that the bad performance of the oxide grown on the p-type SiC system as metal-oxide-semiconductor devices, is mainly linked to the low-density oxide film and can be overcome under proper growth condition. © 2004 American Institute of Physics. | en_HK |
dc.format.extent | 87640 bytes | - |
dc.format.extent | 3688 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_HK |
dc.relation.ispartof | Applied Physics Letters | en_HK |
dc.rights | Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2004, v. 85 n. 23, p. 5580-5582 and may be found at https://doi.org/10.1063/1.1829385 | - |
dc.subject | Physics engineering | en_HK |
dc.title | Density profiles and electrical properties of thermally grown oxide nanofilms on p-type 6H-SiC(0001) | en_HK |
dc.type | Article | en_HK |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=85&issue=23&spage=5580&epage=5582&date=2004&atitle=Density+profiles+and+electrical+properties+of+thermally+grown+oxide+nanofilms+on+p-type+6H–SiC(0001) | en_HK |
dc.identifier.email | Lai, PT:laip@eee.hku.hk | en_HK |
dc.identifier.authority | Lai, PT=rp00130 | en_HK |
dc.description.nature | published_or_final_version | en_HK |
dc.identifier.doi | 10.1063/1.1829385 | en_HK |
dc.identifier.scopus | eid_2-s2.0-12844264227 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-12844264227&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 85 | en_HK |
dc.identifier.issue | 23 | en_HK |
dc.identifier.spage | 5580 | en_HK |
dc.identifier.epage | 5582 | en_HK |
dc.identifier.isi | WOS:000225620100028 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Hazra, S=7005927131 | en_HK |
dc.identifier.scopusauthorid | Chakraborty, S=35577738500 | en_HK |
dc.identifier.scopusauthorid | Lai, PT=7202946460 | en_HK |
dc.identifier.issnl | 0003-6951 | - |