Showing results 1 to 4 of 4
Title | Author(s) | Issue Date | |
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Back-gate bias dependence of the statistical variability of FDSOI MOSFETs with thin BOX Journal:IEEE Transactions on Electron Devices | 2013 | ||
Comprehensive study of the statistical variability in a 22 nm fully depleted ultra-thin-body SOI MOSFET Journal:Solid-State Electronics | 2013 | ||
Statistical variability in fully depleted SOI MOSFETs due to random dopant fluctuations in the source and drain extensions Journal:IEEE Electron Device Letters | 2012 | ||
Three-dimensional statistical simulation of gate leakage fluctuations due to combined interface roughness and random dopants Journal:Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007 |