Showing results 1 to 6 of 6
Title | Author(s) | Issue Date | |
---|---|---|---|
Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy Journal:Applied Physics Letters | 2002 | ||
InN Island shape and its dependence on growth condition of molecular-beam epitaxy Journal:Applied Physics Letters | 2003 | ||
Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy Journal:Applied Physics Letters | 2000 | ||
Scaling of three-dimensional InN islands grown on GaN(0001) by molecular-beam epitaxy Journal:Physical Review B (Condensed Matter) | 2003 | ||
Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy Journal:Physical Review B (Condensed Matter) | 2000 | ||
Surface morphology of GaN: Flat versus vicinal surfaces Proceeding/Conference:Materials Research Society Symposium - Proceedings | 2000 |