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Article: Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy

TitleReduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy
Authors
Xie, MHZheng, LXCheung, SHNg, YFWu, HTong, SYOhtani, N
KeywordsPhysics engineering
Issue Date2000
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2000, v. 77 n. 8, p. 1105-1107 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1289266
AbstractWe observe a significant reduction of threading dislocations in GaN grown on vicinal substrates of SiC(0001). Using scanning tunneling microscopy, we find films grown on vicinal substrates maintain the surface misorientation of the substrate and display terraces with straight edges. On top of the terraces there is no spiral mound, which is the main feature found for films grown on singular substrates. Transmission electron microscopy studies confirm that threading screw dislocations are reduced by two orders of magnitude while edge dislocations are reduced by one order. © 2000 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42454
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000088791600013
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorXie, MHen_HK
dc.contributor.authorZheng, LXen_HK
dc.contributor.authorCheung, SHen_HK
dc.contributor.authorNg, YFen_HK
dc.contributor.authorWu, Hen_HK
dc.contributor.authorTong, SYen_HK
dc.contributor.authorOhtani, Nen_HK
dc.date.accessioned2007-01-29T08:50:22Z-
dc.date.available2007-01-29T08:50:22Z-
dc.date.issued2000en_HK
dc.identifier.citationApplied Physics Letters, 2000, v. 77 n. 8, p. 1105-1107-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42454-
dc.description.abstractWe observe a significant reduction of threading dislocations in GaN grown on vicinal substrates of SiC(0001). Using scanning tunneling microscopy, we find films grown on vicinal substrates maintain the surface misorientation of the substrate and display terraces with straight edges. On top of the terraces there is no spiral mound, which is the main feature found for films grown on singular substrates. Transmission electron microscopy studies confirm that threading screw dislocations are reduced by two orders of magnitude while edge dislocations are reduced by one order. © 2000 American Institute of Physics.en_HK
dc.format.extent65556 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2000 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2000, v. 77 n. 8, p. 1105-1107 and may be found at https://doi.org/10.1063/1.1289266-
dc.subjectPhysics engineeringen_HK
dc.titleReduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=77&issue=8&spage=1105&epage=1107&date=2000&atitle=Reduction+of+threading+defects+in+GaN+grown+on+vicinal+SiC(0001)+by+molecular-beam+epitaxyen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.emailWu, H: hswu@hkucc.hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.identifier.authorityWu, H=rp00813en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1289266en_HK
dc.identifier.scopuseid_2-s2.0-0000932589en_HK
dc.identifier.hkuros55900-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000932589&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume77en_HK
dc.identifier.issue8en_HK
dc.identifier.spage1105en_HK
dc.identifier.epage1107en_HK
dc.identifier.isiWOS:000088791600013-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridZheng, LX=7403405881en_HK
dc.identifier.scopusauthoridCheung, SH=13310365400en_HK
dc.identifier.scopusauthoridNg, YF=7202471126en_HK
dc.identifier.scopusauthoridWu, H=7405584367en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.scopusauthoridOhtani, N=7103392778en_HK
dc.identifier.issnl0003-6951-

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