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Article: Growth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy

TitleGrowth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxy
Authors
Ng, YFCao, YGXie, MHWang, XLTong, SY
KeywordsPhysics engineering
Issue Date2002
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2002, v. 81 n. 21, p. 3960-3962 How to Cite?
DOI: http://dx.doi.org/10.1063/1.1523638
AbstractThe plasma-assisted molecular-beam epitaxy technique was used to study the epitaxial growth of InN on GaN. A relationship between film growth mode and the deposition condition was established by combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The sustained RHEED intensity oscillations were recorded for 2D growth while 2D nucleation islands were revealed by STM. Results showed less than three oscillation periods for 3 D growth, indicating the Strnski-Krastanov (SK) growth mode of the film.
Persistent Identifierhttp://hdl.handle.net/10722/42474
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000179207300016
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorNg, YFen_HK
dc.contributor.authorCao, YGen_HK
dc.contributor.authorXie, MHen_HK
dc.contributor.authorWang, XLen_HK
dc.contributor.authorTong, SYen_HK
dc.date.accessioned2007-01-29T08:50:45Z-
dc.date.available2007-01-29T08:50:45Z-
dc.date.issued2002en_HK
dc.identifier.citationApplied Physics Letters, 2002, v. 81 n. 21, p. 3960-3962-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42474-
dc.description.abstractThe plasma-assisted molecular-beam epitaxy technique was used to study the epitaxial growth of InN on GaN. A relationship between film growth mode and the deposition condition was established by combining reflection high-energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). The sustained RHEED intensity oscillations were recorded for 2D growth while 2D nucleation islands were revealed by STM. Results showed less than three oscillation periods for 3 D growth, indicating the Strnski-Krastanov (SK) growth mode of the film.en_HK
dc.format.extent95216 bytes-
dc.format.extent28672 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2002 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2002, v. 81 n. 21, p. 3960-3962 and may be found at https://doi.org/10.1063/1.1523638-
dc.subjectPhysics engineeringen_HK
dc.titleGrowth mode and strain evolution during InN growth on GaN(0001) by molecular-beam epitaxyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=81&issue=21&spage=3960&epage=3962&date=2002&atitle=Growth+mode+and+strain+evolution+during+InN+growth+on+GaN(0001)+by+molecular-beam+epitaxyen_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1523638en_HK
dc.identifier.scopuseid_2-s2.0-0037132248en_HK
dc.identifier.hkuros75576-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0037132248&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume81en_HK
dc.identifier.issue21en_HK
dc.identifier.spage3960en_HK
dc.identifier.epage3962en_HK
dc.identifier.isiWOS:000179207300016-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridNg, YF=7202471126en_HK
dc.identifier.scopusauthoridCao, YG=7404524244en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.scopusauthoridWang, XL=7501857659en_HK
dc.identifier.scopusauthoridTong, SY=24512624800en_HK
dc.identifier.issnl0003-6951-

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