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Browsing "Department of Electrical & Electronic Engineering" by Author zhang, xf
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Showing results 1 to 9 of 9
Title
Author(s)
Issue Date
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer
Journal:
Applied Physics A: Materials Science and Processing
Xu, JP
Zhang, XF
Li, CX
Chan, CL
Lai, PT
2010
Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k dielectric/SiO2 gate stack
Journal:
Chinese Physics
Zhang, XF
Xu, JP
Lai, PT
Li, CX
Guan, JG
2007
Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
Li, CX
Zhang, XF
Xu, JP
Lai, PT
2008
Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric
Proceeding/Conference:
Proceedings of 8th ICSICT
Zou, X
Xu, JP
Lai, PT
Li, C
Zhang, XF
2006
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Proceeding/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Zou, X
Xu, JP
Lai, PT
Li, CX
Zhang, XF
2007
Improved electrical properties of Ge metal-oxide-semiconductor capacitor with HfTa-based gate dielectric by using TaOxNy interlayer
Journal:
Applied Physics Letters
Zhang, XF
Xu, JP
Li, CX
Lai, PT
Chan, CL
Guan, JG
2008
Improved electrical properties of Ge p-MOSFET with HfO 2 gate dielectric by using TaO xN y interlayer
Journal:
IEEE Electron Device Letters
Xu, JP
Zhang, XF
Li, CX
Lai, PT
Chan, CL
2008
Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs
Proceeding/Conference:
ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Zhang, XF
Xu, JP
Lai, PT
Zou, X
Li, CX
2007
A physical model on scattering at high-κ dielectric/SiO2 interface of SiGe p-MOSFETs
Journal:
IEEE Transactions on Electron Devices
Zhang, XF
Xu, JP
Lai, PT
Li, CX
2007
