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Showing results 1 to 8 of 8

	Title	Author(s)	Issue Date
	A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009	Ji, F Xu, JP Chen, JJ Xu, HX Li, CX Lai, PT	2009
	Comparison between TaON/SiO2 and HfON/SiO2 as dual tunnel layer in charge-trapping flash memory applications Proceeding/Conference:I E E E Conference on Electron Devices and Solid-State Circuits Proceedings	Chen, J Xu, J Liu, L Xu, HX Lai, PT	2012
	Effects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y 2O 3 gate dielectric Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009	Li, CX Xu, HX Xu, JP Lai, PT	2009
	Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient Journal:Thin Solid Films	Xu, HX Xu, JP Li, CX Lai, PT	2010
	Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric Journal:Applied Physics A: Materials Science and Processing	Xu, HX Xu, JP Li, CX Chan, CL Lai, PT	2010
	Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient Journal:Applied Physics Letters	Xu, HX Xu, JP Li, CX Lai, PT	2010
	Improvements of Performance and Reliability for Metal–Oxide–Nitride–Oxide–Silicon Flash Memory With NO- or N2O-Grown Oxynitride as Tunnel Layer Journal:IEEE Transactions on Device and Materials Reliability	Chen, JX Xu, JP Liu, L HUANG, XD Lai, PT Xu, HX	2014
	Optimization of N content for higk-k LaTiON gate dielectric of Ge MOS capacitor Proceeding/Conference:2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009	Xu, HX Xu, JP Li, CX Liu, L Lai, PT Chan, CL	2009

Showing results 1 to 8 of 8