Browsing "Department of Electrical & Electronic Engineering" by Author cheng, yc

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TitleAuthor(s)Issue Date
 
1/f noise behaviors of NO-nitrided n-MOSFETs
Journal:Solid-State Electronics
Xu, JPLai, PTCheng, YC
2001
 
1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses
Journal:Journal of Applied Physics
Xu, JPLai, PTCheng, YC
1999
 
Analysis on accuracy of charge-pumping measurement with gate sawtooth pulses
Journal:IEEE Transactions on Electron Devices
Lai, PTXu, JPPoek, CKCheng, YC
1998
 
An analysis on stress-induced degradation of 1/f noise in n-MOSFETs
Proceeding/Conference:Proceedings of 15th International Conference Noise in Physical Systems and 1/f Fluctuations
Lai, PTXu, JCheng, YC
1999
 
An analytical model for the narrow-width effect in ion-implanted MOSFETs
Journal:Solid State Electronics
Lai, PTCheng, YC
1984
 
An analytical model for the threshold voltage of a narrow-width MOSFET
Journal:IEEE Transactions on Electron Devices
Cheng, YCLai, PT
1984
 
Characterisation and simulation of substrate current in thermally reoxidised-nitrided-oxide n-MOSFET's
Proceeding/Conference:International Semiconductor Device Research Symposium, ISDRS-91
Ma, ZJLai, PTLiu, ZHCheng, YC
1991
 
Characterization of rapid thermally nitrided SiO2/Si interface by the conductance technique
Journal:Applied Physics Letters
Liu, ZHLai, PTCheng, YC
1990
 
Charge trapping and interface state generation by avalanche hot-electron injection in rapid thermal NH3 annealed and reoxidized SiO2 films
Journal:Journal of the Electrochemical Society
Liu, ZHChen, PSCheng, YCLai, PT
1990
 
Closed-form delay expression for digital BiCMOS circuits with high-injection effects
Journal:IEEE Journal of Solid-State Circuits
Lai, PTCheng, YC
1994
 
Comparison of threshold modulation in narrow MOSFETs with different isolation structures
Journal:Solid-State Electronics
Lai, PTCheng, YC
1985
 
A comparison between NO-annealed O2- and N2O-grown gate dielectrics
Proceeding/Conference:IEEE Hong Kong Electron Devices Meeting Proceedings
Lai, PTXu, JPCheng, YC
1998
 
A comparison between the interface properties of N2O-nitrided and N2O-grown oxides
Journal:Solid-State Electronics
Xu, JPLai, PTCheng, YC
1998
 
Computer simulation of rapid thermal annealing of thermally grown oxide in ammonia ambient
Proceeding/Conference:Techical Digest of 1989 International Conference on VLSI and CAD (ICVC '89)
Lai, PTCheng, YCWong, H.
1989
 
Correlation between hot-carrier-induced interface states and GIDL current increase in N-MOSFET's
Journal:IEEE Transactions on Electron Devices
Lai, PTXu, JPWong, WMLo, HBCheng, YC
1998
 
Deep-depletion-layer impact-ionization-induced gate-oxide breakdown in thin-oxide n-MOSFETs
Journal:Solid-State Electronics
Huang, MQLai, PTMa, ZJWong, HCheng, YC
1993
 
Dynamic-stress-induced enhanced degradation of 1/f noise in n-MOSFET's
Journal:IEEE Transactions on Electron Devices
Xu, JPLai, PTCheng, YC
2000
 
Effects of Gate-Pulse Shape on the Accuracy of Charge-Pumping Measurement
Proceeding/Conference:International Conference on VLSI and CAD Proceedings
Lai, PTXu, JPPoek, CKCheng, YC
1997
 
Effects of hole trapping on degradation behaviors in thermally-nitrided oxides under F-N injection
Proceeding/Conference:Proceedings of the 3rd International Conference on Solid State and Integrated Circuit Technology
Lai, PTMa, ZJCheng, YCLiu, BYHuang, MQ
1992
 
Effects of nitridation and annealing on interface properties of thermally oxidized SiO2/SiC metal–oxide–semiconductor system
Journal:Applied Physics Letters
Lai, PTChakraborty, SChan, CLCheng, YC
2000
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