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Conference Paper: Characterisation and simulation of substrate current in thermally reoxidised-nitrided-oxide n-MOSFET's

TitleCharacterisation and simulation of substrate current in thermally reoxidised-nitrided-oxide n-MOSFET's
Authors
Ma, ZJLai, PTLiu, ZHCheng, YC
Issue Date1991
Citation
The 1st International Semiconductor Device Research Symposium (ISDRS-91) Charlottesville, VA., 4-6 December 1991, p. 423-426 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/204129

 

DC FieldValueLanguage
dc.contributor.authorMa, ZJen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLiu, ZHen_US
dc.contributor.authorCheng, YCen_US
dc.date.accessioned2014-09-19T20:06:29Z-
dc.date.available2014-09-19T20:06:29Z-
dc.date.issued1991en_US
dc.identifier.citationThe 1st International Semiconductor Device Research Symposium (ISDRS-91) Charlottesville, VA., 4-6 December 1991, p. 423-426en_US
dc.identifier.urihttp://hdl.handle.net/10722/204129-
dc.languageengen_US
dc.relation.ispartofInternational Semiconductor Device Research Symposium, ISDRS-91en_US
dc.titleCharacterisation and simulation of substrate current in thermally reoxidised-nitrided-oxide n-MOSFET'sen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.emailCheng, YC: yccheng@hkucc.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.hkuros240579en_US
dc.identifier.spage423en_US
dc.identifier.epage426en_US

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