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Conference Paper: Effects of hole trapping on degradation behaviors in thermally-nitrided oxides under F-N injection

TitleEffects of hole trapping on degradation behaviors in thermally-nitrided oxides under F-N injection
Authors
Lai, PTMa, ZJCheng, YCLiu, BYHuang, MQ
Issue Date1992
Citation
The 3rd International Conference on Solid State and Integrated Circuit Technology, Beijing, China, In Conference Proceedings, 1992, p. 662-665 How to Cite?
AbstractC-V and I-V studies reveal that thermal nitridation can harden Si/SiO2 interface but introduces some hole traps into the oxides.It is found that in the initial period of F-N stress,donor-type interface states are generated in conventional oxides,while the substitute in nitrided oxides is bole trapping.As a result,the device degradation behaviors in both oxides are quite different in terms of their flatband voltages,off-state,sub-threshold and post-threshold I-V characteristics, etc..
Persistent Identifierhttp://hdl.handle.net/10722/204131

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorMa, ZJen_US
dc.contributor.authorCheng, YCen_US
dc.contributor.authorLiu, BYen_US
dc.contributor.authorHuang, MQen_US
dc.date.accessioned2014-09-19T20:06:30Z-
dc.date.available2014-09-19T20:06:30Z-
dc.date.issued1992en_US
dc.identifier.citationThe 3rd International Conference on Solid State and Integrated Circuit Technology, Beijing, China, In Conference Proceedings, 1992, p. 662-665en_US
dc.identifier.urihttp://hdl.handle.net/10722/204131-
dc.description.abstractC-V and I-V studies reveal that thermal nitridation can harden Si/SiO2 interface but introduces some hole traps into the oxides.It is found that in the initial period of F-N stress,donor-type interface states are generated in conventional oxides,while the substitute in nitrided oxides is bole trapping.As a result,the device degradation behaviors in both oxides are quite different in terms of their flatband voltages,off-state,sub-threshold and post-threshold I-V characteristics, etc..-
dc.languageengen_US
dc.relation.ispartofProceedings of the 3rd International Conference on Solid State and Integrated Circuit Technologyen_US
dc.titleEffects of hole trapping on degradation behaviors in thermally-nitrided oxides under F-N injectionen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.hkuros240591en_US
dc.identifier.spage662en_US
dc.identifier.epage665en_US

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