Showing results 3 to 5 of 5
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Title | Author(s) | Issue Date | |
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Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2022 | ||
Perspective on Low-dimensional Channel Materials for Extremely Scaled CMOS Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2022 | ||
pMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2022 |