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Conference Paper: pMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping

TitlepMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping
Authors
Hung, Terry Y.T.Li, Meng ZhanYun, Wei ShengChou, Sui AnSu, Sheng KaiChen, EdwardLiew, San LinYang, Ying MeiLin, Kuang I.Hou, VincentLee, T. Y.Wang, HanCheng, AlbertLin, Minn TsongWong, H. S.PhilipRadu, Iuliana P.
Issue Date2022
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2022, v. 2022-December, p. 731-734 How to Cite?
DOI: http://dx.doi.org/10.1109/IEDM45625.2022.10019321
AbstractWe present the first demonstration of p-MOSFET with a high ON current of 10{-5} mathrm{A}/ mathrm{u} mathrm{m} and good S.S. sim 80 mathrm{m} mathrm{V}/ mathrm{d} mathrm{e} mathrm{c}. MOSFETs have the advantage of lower access resistance compared to Schottky barrier FETs. This requires spacer doping. Here, we introduce a self-limiting, fab-compatible process which consists of mathrm{W} mathrm{O}-{ mathrm{x}} obtained from mathrm{W} mathrm{S} mathrm{e}-{2} by O2 plasma conversion. We analyze the process condition which enhance the doping effect. We quantify the doping level and the impact of the channel bandgap. We demonstrate a self-aligned version of the spacer doping for MOSFET fabrication.
Persistent Identifierhttp://hdl.handle.net/10722/335437
ISSN
0163-1918
2023 SCImago Journal Rankings: 1.047
ISI Accession Number ID
WOS:000968800700001

 

DC FieldValueLanguage
dc.contributor.authorHung, Terry Y.T.-
dc.contributor.authorLi, Meng Zhan-
dc.contributor.authorYun, Wei Sheng-
dc.contributor.authorChou, Sui An-
dc.contributor.authorSu, Sheng Kai-
dc.contributor.authorChen, Edward-
dc.contributor.authorLiew, San Lin-
dc.contributor.authorYang, Ying Mei-
dc.contributor.authorLin, Kuang I.-
dc.contributor.authorHou, Vincent-
dc.contributor.authorLee, T. Y.-
dc.contributor.authorWang, Han-
dc.contributor.authorCheng, Albert-
dc.contributor.authorLin, Minn Tsong-
dc.contributor.authorWong, H. S.Philip-
dc.contributor.authorRadu, Iuliana P.-
dc.date.accessioned2023-11-17T08:25:53Z-
dc.date.available2023-11-17T08:25:53Z-
dc.date.issued2022-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2022, v. 2022-December, p. 731-734-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/335437-
dc.description.abstractWe present the first demonstration of p-MOSFET with a high ON current of 10{-5} mathrm{A}/ mathrm{u} mathrm{m} and good S.S. sim 80 mathrm{m} mathrm{V}/ mathrm{d} mathrm{e} mathrm{c}. MOSFETs have the advantage of lower access resistance compared to Schottky barrier FETs. This requires spacer doping. Here, we introduce a self-limiting, fab-compatible process which consists of mathrm{W} mathrm{O}-{ mathrm{x}} obtained from mathrm{W} mathrm{S} mathrm{e}-{2} by O2 plasma conversion. We analyze the process condition which enhance the doping effect. We quantify the doping level and the impact of the channel bandgap. We demonstrate a self-aligned version of the spacer doping for MOSFET fabrication.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titlepMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM45625.2022.10019321-
dc.identifier.scopuseid_2-s2.0-85147525919-
dc.identifier.volume2022-December-
dc.identifier.spage731-
dc.identifier.epage734-
dc.identifier.isiWOS:000968800700001-

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