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Conference Paper: pMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping

TitlepMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping
Authors
Issue Date2022
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2022, v. 2022-December, p. 731-734 How to Cite?
AbstractWe present the first demonstration of p-MOSFET with a high ON current of 10{-5} mathrm{A}/ mathrm{u} mathrm{m} and good S.S. sim 80 mathrm{m} mathrm{V}/ mathrm{d} mathrm{e} mathrm{c}. MOSFETs have the advantage of lower access resistance compared to Schottky barrier FETs. This requires spacer doping. Here, we introduce a self-limiting, fab-compatible process which consists of mathrm{W} mathrm{O}-{ mathrm{x}} obtained from mathrm{W} mathrm{S} mathrm{e}-{2} by O2 plasma conversion. We analyze the process condition which enhance the doping effect. We quantify the doping level and the impact of the channel bandgap. We demonstrate a self-aligned version of the spacer doping for MOSFET fabrication.
Persistent Identifierhttp://hdl.handle.net/10722/335437
ISSN
2023 SCImago Journal Rankings: 1.047
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHung, Terry Y.T.-
dc.contributor.authorLi, Meng Zhan-
dc.contributor.authorYun, Wei Sheng-
dc.contributor.authorChou, Sui An-
dc.contributor.authorSu, Sheng Kai-
dc.contributor.authorChen, Edward-
dc.contributor.authorLiew, San Lin-
dc.contributor.authorYang, Ying Mei-
dc.contributor.authorLin, Kuang I.-
dc.contributor.authorHou, Vincent-
dc.contributor.authorLee, T. Y.-
dc.contributor.authorWang, Han-
dc.contributor.authorCheng, Albert-
dc.contributor.authorLin, Minn Tsong-
dc.contributor.authorWong, H. S.Philip-
dc.contributor.authorRadu, Iuliana P.-
dc.date.accessioned2023-11-17T08:25:53Z-
dc.date.available2023-11-17T08:25:53Z-
dc.date.issued2022-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2022, v. 2022-December, p. 731-734-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/335437-
dc.description.abstractWe present the first demonstration of p-MOSFET with a high ON current of 10{-5} mathrm{A}/ mathrm{u} mathrm{m} and good S.S. sim 80 mathrm{m} mathrm{V}/ mathrm{d} mathrm{e} mathrm{c}. MOSFETs have the advantage of lower access resistance compared to Schottky barrier FETs. This requires spacer doping. Here, we introduce a self-limiting, fab-compatible process which consists of mathrm{W} mathrm{O}-{ mathrm{x}} obtained from mathrm{W} mathrm{S} mathrm{e}-{2} by O2 plasma conversion. We analyze the process condition which enhance the doping effect. We quantify the doping level and the impact of the channel bandgap. We demonstrate a self-aligned version of the spacer doping for MOSFET fabrication.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titlepMOSFET with CVD-grown 2D semiconductor channel enabled by ultra-thin and fab-compatible spacer doping-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM45625.2022.10019321-
dc.identifier.scopuseid_2-s2.0-85147525919-
dc.identifier.volume2022-December-
dc.identifier.spage731-
dc.identifier.epage734-
dc.identifier.isiWOS:000968800700001-

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