Showing results 1 to 7 of 7
Title | Author(s) | Issue Date | Views | |
---|---|---|---|---|
Effects of Ta incorporation in La2O3 gate dielectric of InGaZnO thin-film transistor Journal:Applied Physics Letters | 2014 | 48 | ||
Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric Journal:IEEE Electron Device Letters | 2014 | |||
2013 | 67 | |||
2015 | 63 | |||
Improved Performance of InGaZnO Thin-Film Transistor with HfLaO Gate Dielectric Annealed in Oxygen Journal:IEEE Transactions on Device and Materials Reliability | 2014 | |||
Influence of Ar/O2 ratio during IGZO deposition on the electrical characteristics of a-IGZO TFT with HfLaO gate dielectric Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings | 2013 | 61 | ||
A low-frequency noise model with carrier generation-recombination process for pentacene organic thin-film transistor Journal:Journal of Applied Physics | 2013 |