File Download
Supplementary
-
Citations:
- Appears in Collections:
Conference Paper: Influence of Ar/O2 ratio during IGZO deposition on the electrical characteristics of a-IGZO TFT with HfLaO gate dielectric
Title | Influence of Ar/O2 ratio during IGZO deposition on the electrical characteristics of a-IGZO TFT with HfLaO gate dielectric |
---|---|
Authors | |
Issue Date | 2013 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 |
Citation | The 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2 How to Cite? |
Abstract | In this work, the influence of Ar/O 2 ratio during InGaZnO (IGZO) deposition on the electrical characteristics of a-IGZO thin-film transistor (TFT) with HfLaO gate dielectric has been investigated. It is found that lowering the oxygen concentration in the a-IGZO sputtering ambient can effectively improve the device performance, including carrier mobility (μ sat ), threshold voltage (V th ), sub-threshold slope (SS) and on-off current ratio (I on /I off ). Moreover, the hysteresis (ΔV H ) of the transfer characteristics of the device under forward and reverse sweepings of gate bias voltage can be suppressed, and improvement on its low-frequency noise properties has been found for lower oxygen concentration in the sputtering ambient. As a result, a high saturation mobility of 12.5 cm 2 /Vs, a low sub-threshold slope of 0.260 V/dec and a small Hooge's parameter (α H ) of 0.4 have been achieved for the sample with an Ar/O 2 ratio of 24 sccm/1 sccm. All these improvements can be ascribed to the fact that more oxygen vacancies exist in the a-IGZO film deposited in an ambient with less oxygen. These positively-charged oxygen vacancies can induce a higher electron concentration in the a-IGZO film and thus fill up more electron traps at the interface between a-IGZO and HtLaO. |
Persistent Identifier | http://hdl.handle.net/10722/191662 |
ISBN |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Qian, L | en_US |
dc.contributor.author | Lai, PT | en_US |
dc.date.accessioned | 2013-10-15T07:14:58Z | - |
dc.date.available | 2013-10-15T07:14:58Z | - |
dc.date.issued | 2013 | en_US |
dc.identifier.citation | The 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2 | en_US |
dc.identifier.isbn | 978-1-4673-2523-3 | - |
dc.identifier.uri | http://hdl.handle.net/10722/191662 | - |
dc.description.abstract | In this work, the influence of Ar/O 2 ratio during InGaZnO (IGZO) deposition on the electrical characteristics of a-IGZO thin-film transistor (TFT) with HfLaO gate dielectric has been investigated. It is found that lowering the oxygen concentration in the a-IGZO sputtering ambient can effectively improve the device performance, including carrier mobility (μ sat ), threshold voltage (V th ), sub-threshold slope (SS) and on-off current ratio (I on /I off ). Moreover, the hysteresis (ΔV H ) of the transfer characteristics of the device under forward and reverse sweepings of gate bias voltage can be suppressed, and improvement on its low-frequency noise properties has been found for lower oxygen concentration in the sputtering ambient. As a result, a high saturation mobility of 12.5 cm 2 /Vs, a low sub-threshold slope of 0.260 V/dec and a small Hooge's parameter (α H ) of 0.4 have been achieved for the sample with an Ar/O 2 ratio of 24 sccm/1 sccm. All these improvements can be ascribed to the fact that more oxygen vacancies exist in the a-IGZO film deposited in an ambient with less oxygen. These positively-charged oxygen vacancies can induce a higher electron concentration in the a-IGZO film and thus fill up more electron traps at the interface between a-IGZO and HtLaO. | - |
dc.language | eng | en_US |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 | - |
dc.relation.ispartof | IEEE Conference on Electron Devices and Solid-State Circuits Proceedings | en_US |
dc.title | Influence of Ar/O2 ratio during IGZO deposition on the electrical characteristics of a-IGZO TFT with HfLaO gate dielectric | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | en_US |
dc.identifier.authority | Lai, PT=rp00130 | en_US |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/EDSSC.2013.6628089 | - |
dc.identifier.hkuros | 226067 | en_US |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 2 | - |
dc.publisher.place | United States | en_US |
dc.customcontrol.immutable | sml 131108 | - |