File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Improved Performance of InGaZnO Thin-Film Transistor with HfLaO Gate Dielectric Annealed in Oxygen

TitleImproved Performance of InGaZnO Thin-Film Transistor with HfLaO Gate Dielectric Annealed in Oxygen
Authors
KeywordsAmorphous InGaZnO (a-IGZO)
annealing
HfLaO
high-k
Mobility
thin-film transistor (TFT)
Issue Date2014
Citation
IEEE Transactions on Device and Materials Reliability, 2014, vol.14, p. pp177-181 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/202915
ISSN
2020 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.826
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_US
dc.contributor.authorQIAN, Len_US
dc.date.accessioned2014-09-19T10:09:54Z-
dc.date.available2014-09-19T10:09:54Z-
dc.date.issued2014en_US
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2014, vol.14, p. pp177-181en_US
dc.identifier.issn1530-4388-
dc.identifier.urihttp://hdl.handle.net/10722/202915-
dc.languageengen_US
dc.relation.ispartofIEEE Transactions on Device and Materials Reliabilityen_US
dc.subjectAmorphous InGaZnO (a-IGZO)-
dc.subjectannealing-
dc.subjectHfLaO-
dc.subjecthigh-k-
dc.subjectMobility-
dc.subjectthin-film transistor (TFT)-
dc.titleImproved Performance of InGaZnO Thin-Film Transistor with HfLaO Gate Dielectric Annealed in Oxygenen_US
dc.typeArticleen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.doi10.1109/TDMR.2013.2275191-
dc.identifier.scopuseid_2-s2.0-84896456043-
dc.identifier.hkuros240492en_US
dc.identifier.volume14en_US
dc.identifier.spage177en_US
dc.identifier.epage181en_US
dc.identifier.eissn1558-2574-
dc.identifier.isiWOS:000335226600025-
dc.identifier.issnl1530-4388-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats