Browsing by Author Zhang, XF

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TitleAuthor(s)Issue Date
 
A high precision calibration of the nonlinear energy response at Daya Bay
Journal:Nuclear Instruments & Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
Adey, DAn, FPBalantekin, ABBand, HRBishai, MBlyth, SCao, DCao, GFCao, JChang, JFChang, YChen, HSChen, SMChen, YChen, YXCheng, JCheng, ZKCherwinka, JJChu, MCChukanov, ACummings, JPDash, NDeng, FSDing, YYDiwan, MVDohnal, TDove, JDvořák, MDwyer, DAGonchar, MGong, GHGong, HGu, WQGuo, JYGuo, LGuo, XHGuo, YHGuo, ZHackenburg, RWHans, SHe, MHeeger, KMHeng, YKHiguera, AHor, YKHsiung, YBHu, BZHu, JRHu, THu, ZJHuang, HXHuang, XTHuang, YBHuber, PJaffe, DEJen, KLJetter, SJi, XLJi, XPJohnson, RAJones, DKang, LKettell, SHKoerner, LWKohn, SKramer, MLangford, TJLebanowski, LLee, JLee, JHCLei, RTLeitner, RLeung, JKCLi, CLi, FLi, HLLi, QJLi, SLi, SCLi, SJLi, WDLi, XNLi, XQLi, YFLi, ZBLiang, HLin, CJLin, GLLin, SLin, SKLing, JJLing, JMLittenberg, LLittlejohn, BRLiu, JCLiu, JLLiu, YLiu, YHLu, CLu, HQLu, JSLuk, KBMa, XBMa, XYMa, YQMarshall, CCaicedo, DAMMcDonald, KTMcKeown, RDMitchell, ILepin, LMNapolitano, JNaumov, DNaumova, EOchoa-Ricoux, JPOlshevskiy, APan, HRPark, JPatton, SPec, VPeng, JCPinsky, LPun, CSJQi, FZQi, MQian, XRaper, NRen, JRosero, RRoskovec, BRuan, XCSteiner, HSun, JLTreskov, KTse, W-HTull, CEViren, BVorobel, VWang, CHWang, JWang, MWang, NYWang, RGWang, WWang, WWang, XWang, YWang, YFWang, ZWang, ZWang, ZMWei, HYWei, LHWen, LJWhisnant, KWhite, CGWong, HLHWong, SCFWorcester, EWu, QWu, WJXia, DMXing, ZZXu, JLXue, TYang, CGYang, LYang, MSYang, YZYe, MYeh, MYoung, BLYu, HZYu, ZYYue, BBZeng, SZeng, YZhan, LZhang, CZhang, CCZhang, FYZhang, HHZhang, JWZhang, QMZhang, RZhang, XFZhang, XTZhang, YMZhang, YMZhang, YXZhang, YYZhang, ZJZhang, ZPZhang, ZYZhao, JZhou, LZhuang, HLZou, JH
2019
 
2017
 
2011
 
2010
 
2007
 
Enhanced performance of Si MOS capacitors with HfTaOxNy gate dielectric by using AlOxNy or TaOxNy interlayer
Proceeding/Conference:IEEE Conference on Electron Devices and Solid-State Circuits Proceedings
2008
 
Adey, DAn, FPBalantekin, ABBand, HRBishai, MBlyth, SCao, DCao, GFCao, JChang, JFChang, YZhang, RZhang, XFZhang, XTZhang, YMZhang, YMZhang, YXZhang, YYZhang, ZJZhang, ZPChukanov, AMa, XYZhang, ZYZhao, JZhou, LZhuang, HLZou, JHCummings, JPDash, NDeng, FSDing, YYDiwan, MVMa, YQDohnal, TDove, JDvořák, MDwyer, DAGonchar, MGong, GHGong, HGu, WQGuo, JYGuo, LMarshall, CGuo, XHGuo, YHGuo, ZHackenburg, RWHans, SHe, MHeeger, KMHeng, YKHiguera, AHor, YKMartinez Caicedo, DAHsiung, YBHu, BZHu, JRHu, THu, ZJHuang, HXHuang, XTHuang, YBHuber, PJaffe, DEMcDonald, KTJen, KLJi, XLJi, XPJohnson, RAJones, DKang, LKettell, SHKoerner, LWKohn, SKramer, MMcKeown, RDLangford, TJLee, JLee, JHCLei, RTLeitner, RLeung, JKCLi, CLi, FLi, HLLi, QJMitchell, ILi, SLi, SCLi, SJLi, WDLi, XNLi, XQLi, YFLi, ZBLiang, HLin, CJMora Lepin, LLin, GLLin, SLing, JJLink, JMLittenberg, LLittlejohn, BRLiu, JCLiu, JLLiu, YLiu, YHNapolitano, JLu, CLu, HQLu, JSLuk, KBMa, XBNaumov, DChen, HSNaumova, EOchoa-Ricoux, JPOlshevskiy, APan, HRPark, JPatton, SPec, VPeng, JCPinsky, LPun, CSJChen, SMQi, FZQi, MQian, XRaper, NRen, JRosero, RRoskovec, BRuan, XCSteiner, HSun, JLChen, YTreskov, KTse, WHTull, CEViren, BVorobel, VWang, CHWang, JWang, MWang, NYWang, RGChen, YXWang, WWang, WWang, XWang, YWang, YFWang, ZWang, ZWang, ZMWei, HYWei, LHCheng, JWei, LJWhisnant, KWhite, CGWong, HLHWong, SCFWorcester, EWu, QWu, WJXia, DMXing, ZZCheng, ZKXu, JLXue, TYang, CGYang, LYang, MSYang, YZYe, MYeh, MYoung, BLYu, HZCherwinka, JJYu, ZYYue, BBZeng, SZeng, YZhan, LZhang, CZhang, CCZhang, FYZhang, HHZhang, JWChu, MCZhang, QM
2019
 
Fabrication and characterization of multi-channel chitosan nerve conduit and its potential application
Proceeding/Conference:International Symposium on Healthy Aging, ISHA 2008
2008
 
Gate Leakage Model of Ge MOS Capacitor with High-k Gate Dielectric
Proceeding/Conference:Proceedings of 8th ICSICT
2006
Gate-leakage model of Ge MOS capacitor with high-k gate dielectric
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
2007
 
2021
 
2008
 
2008
 
Improved measurement of the reactor antineutrino flux at Daya Bay
Journal:Physical Review D: covering particles, fields, gravitation, and cosmology
Adey, DAn, FPBalantekin, ABBand, HRBishai, MBlyth, SCao, DCao, GFCao, JChan, YLChang, JFLi, XNLi, XQLi, YFLi, ZBLiang, HLin, CJLin, GLLin, SLin, SKMcDonald, KTZhang, CLin, YCLing, JJLink, JMLittenberg, LLittlejohn, BRLiu, JCLiu, JLLiu, YLiu, YHLoh, CWZhang, CCMcKeown, RDLu, CLu, HQChang, YMitchell, IMora Lepin, LNapolitano, JNaumov, DNaumova, EOchoa-Ricoux, JPZhang, FYOlshevskiy, APan, HRPark, JPatton, SChen, HSPec, VPeng, JCPinsky, LPun, CSJQi, FZZhang, HHQi, MQian, XQiu, RMRaper, NRen, JChen, SMRosero, RRoskovec, BRuan, XCSteiner, HZhang, JWSun, JLTreskov, KTse, WHTull, CEViren, BVorobel, VChen, YWang, CHWang, JWang, MZhang, QMWang, NYWang, RGWang, WWang, WWang, XWang, YFWang, ZChen, YXWang, ZWang, ZMZhang, RWei, HYWei, LHWei, LJWhisnant, KWhite, CGWise, TWong, HLHWong, SCFCheng, JWorcester, EZhang, XFWu, QWu, WJXia, DMXing, ZZXu, JLXue, TYang, CGYang, HYang, LCheng, ZKZhang, XTYang, MSYang, MTYang, YZYe, MYeh, MYoung, BLYu, HZYu, ZYYue, BBZeng, SChu, MCCherwinka, JJZhan, LLu, JSZhang, YMZhang, YMZhang, YXZhang, YYZhang, ZJZhang, ZPZhang, ZYZhao, JZheng, PZhou, LLuk, KBChukanov, AZhuang, HLZou, JHCummings, JPDeng, FSDing, YYDiwan, MVDolgareva, MDove, JDwyer, DAMa, XBEdwards, WRGonchar, MGong, GHGong, HGu, WQGuo, LGuo, XHGuo, YHGuo, ZHackenburg, RWMa, XYHans, SHe, MHeeger, KMHeng, YKHiguera, AHsiung, YBHu, BZHu, THu, ZJHuang, HXMa, YQHuang, XTHuang, YBHuber, PHuo, WHussain, GJaffe, DEJen, KLJi, XLJi, XPJohnson, RAMalyshkin, YJones, DKang, LKettell, SHKoerner, LWKohn, SKramer, MLangford, TJLebanowski, LLee, JLee, JHCMarshall, CLei, RTLeitner, RLeung, JKCLi, CLi, FLi, HLLi, QJLi, SLi, SCLi, SJMartinez Caicedo, DALi, WD
2019
 
Adey, DAn, FPBalantekin, ABBand, HRBishai, MBlyth, SCao, DCao, GFCao, JChan, YLChang, JFLu, JSLuk, KBMa, XBMa, XYMa, YQMalyshkin, YMarshall, CMartinez Caicedo, DAMcDonald, KTMcKeown, RDChang, YMitchell, IMora Lepin, LNapolitano, JNaumov, DNaumova, EOchoa-Ricoux, JPOlshevskiy, APan, HRPark, JPatton, SChen, HSPec, VPeng, JCPinsky, LPun, JCSQi, FZQi, MQian, XQiu, RMRaper, NRen, JChen, SMRosero, RRoskovec, BRuan, XCSteiner, HSun, JLTang, WTaychenachev, DTreskov, KTse, WHTull, CEChen, YViren, BVorobel, VWang, CHWang, JWang, MWang, NYWang, RGWang, WWang, WWang, XChen, YXWang, YFWang, ZWang, ZWang, ZMWei, HYWei, LHWen, LJWhisnant, KWhite, CGWise, TCheng, JWong, HLHWong, SCFWorcester, EWu, QWu, WJXia, DMXing, ZZXu, JLXue, TYang, CGCheng, ZKYang, HYang, LYang, MSYang, MTYang, YZYe, MYeh, MYoung, BLYu, HZYu, ZYCherwinka, JJYue, BBZeng, SZhan, LZhang, CZhang, CCZhang, FYZhang, HHZhang, JWZhang, QMZhang, RChu, MCZhang, XFZhang, XTZhang, YMZhang, YMZhang, YXZhang, YYZhang, ZJZhang, ZPZhang, ZYZhao, JChukanov, AZheng, PZhou, LZhuang, HLZou, JHCummings, JPDeng, FSDing, YYDiwan, MVDolgareva, MDwyer, DAEdwards, WRGonchar, MGong, GHGong, HGu, WQGuo, LGuo, XHGuo, YHGuo, ZHackenburg, RWHans, SHe, MHeeger, KMHeng, YKHiguera, AHsiung, YBHu, BZHu, JRHu, THu, ZJHuang, HXHuang, XTHuang, YBHuber, PHuo, WHussain, GJaffe, DEJen, KLJi, XLJi, XPJohnson, RAJones, DKang, LKettell, SHKoerner, LWKohn, SKramer, MLangford, TJLebanowski, LLee, JLee, HCJLei, RTLeitner, RLeung, JKCLi, CLi, FLi, HLLi, QJLi, SLi, SCLi, SJLi, WDLi, XNLi, XQLi, YFLi, ZBLiang, HLin, CJLin, GLLin, SLin, SKLin, YCLing, JJLink, JMLittenberg, LLittlejohn, BRLiu, JCLiu, JLLiu, YLiu, YHLoh, CWLu, CLu, HQ
2018
2004
Modeling of scattering at high-k dielectric/SiO2 interface of strained SiGe MOSFETs
Proceeding/Conference:ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
2007
 
2021
 
2007
 
2020