Browsing by Author Sasaki, Kohei

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 中
Showing results 1 to 13 of 13
TitleAuthor(s)Issue Date
 
10-kV Ga<inf>2</inf>O<inf>3</inf>Charge-Balance Schottky Rectifier Operational at 200 °C
Journal:IEEE Electron Device Letters
Qin, YuanXiao, MingPorter, MatthewMa, YunweiSpencer, JosephDu, ZhonghaoJacobs, Alan G.Sasaki, KoheiWang, HanTadjer, MarkoZhang, Yuhao
2023
 
2 kV, 0.7 mO•cm<sup>2</sup> Vertical Ga<inf>2</inf>O<inf>3</inf> Superjunction Schottky Rectifier with Dynamic Robustness
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
Qin, YuanPorter, MatthewXiao, MingDu, ZhonghaoZhang, HongmingMa, YunweiSpencer, JosephWang, BoyanSong, QihaoSasaki, KoheiLin, Chia HungKravchenko, IvanBriggs, Dayrl P.Hensley, Dale K.Tadjer, MarkoWang, HanZhang, Yuhao
2023
 
2.5 kV Vertical Ga<inf>2</inf>O<inf>3</inf>Schottky Rectifier With Graded Junction Termination Extension
Journal:IEEE Electron Device Letters
Wang, BoyanXiao, MingSpencer, JosephQin, YuanSasaki, KoheiTadjer, Marko J.Zhang, Yuhao
2023
 
Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga<inf>2</inf>O<inf>3</inf>:N with high mobility
Journal:Applied Physics Letters
Spencer, Joseph A.Tadjer, Marko J.Jacobs, Alan G.Mastro, Michael A.Lyons, John L.Freitas, Jaime A.Gallagher, James C.Thieu, Quang T.Sasaki, KoheiKuramata, AkitoZhang, YuhaoAnderson, Travis J.Hobart, Karl D.
2022
 
High-voltage vertical Ga<inf>2</inf>O<inf>3</inf> power rectifiers operational at high temperatures up to 600 K
Journal:Applied Physics Letters
Wang, BoyanXiao, MingYan, XiaodongWong, Hiu YungMa, JiahuiSasaki, KoheiWang, HanZhang, Yuhao
2019
 
(Invited) How to Achieve Low Thermal Resistance and High Electrothermal Ruggedness in Ga<inf>2</inf>O<inf>3</inf>Devices?
Proceeding/Conference:ECS Transactions
Zhang, YuhaoWang, BoyanXiao, MingSpencer, JosephZhang, RuizheKnoll, JackDimarino, ChristinaLu, Guo QuanSasaki, KoheiButtay, Cyril
2021
 
Low Thermal Resistance (0.5 K/W) GaO Schottky Rectifiers with Double-Side Packaging
Journal:IEEE Electron Device Letters
Wang, BoyanXiao, MingKnoll, JackButtay, CyrilSasaki, KoheiLu, Guo QuanDimarino, ChristinaZhang, Yuhao
2021
 
NiO Junction Termination Extension for Ga<inf>2</inf>O<inf>3</inf>Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed
Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Xiao, MingWang, BoyanZhang, RuizheSong, QihaoSpencer, JosephDu, ZhonghaoQin, YuanSasaki, KoheiWang, HanTadjer, MarkoZhang, Yuhao
2023
 
NiO junction termination extension for high-voltage (&gt;3 kV) Ga<inf>2</inf>O<inf>3</inf> devices
Journal:Applied Physics Letters
Xiao, MingWang, BoyanSpencer, JosephQin, YuanPorter, MatthewMa, YunweiWang, YifanSasaki, KoheiTadjer, MarkoZhang, Yuhao
2023
 
Packaged Ga<inf>2</inf>O<inf>3</inf>Schottky Rectifiers with over 60-A Surge Current Capability
Journal:IEEE Transactions on Power Electronics
Xiao, MingWang, BoyanLiu, JingcunZhang, RuizheZhang, ZichenDing, ChaoLu, ShengchangSasaki, KoheiLu, Guo QuanButtay, CyrilZhang, Yuhao
2021
 
Recent progress of Ga<inf>2</inf>O<inf>3</inf> power technology: large-area devices, packaging and applications
Journal:Japanese Journal of Applied Physics
Qin, YuanWang, ZhengpengSasaki, KoheiYe, JiandongZhang, Yuhao
2023
 
Reliability of NiO/β-Ga2O3 bipolar heterojunction
Journal:Applied Physics Letters
Gong, HeheYang, XinPorter, MatthewYang, ZinengWang, BixuanLi, LiFu, LanSasaki, KoheiWang, HanGu, ShulinZhang, RongYe, JiandongZhang, Yuhao
6-Jan-2025
 
TCAD-Machine learning framework for device variation and operating temperature analysis with experimental demonstration
Journal:IEEE Journal of the Electron Devices Society
Wong, Hiu YungXiao, MingWang, BoyanChiu, Yan KaYan, XiaodongMa, JiahuiSasaki, KoheiWang, HanZhang, Yuhao
2020
Showing results 1 to 13 of 13