Browsing by Author Liu, Jingcun

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TitleAuthor(s)Issue Date
 
2021
Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses
Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings
2022
 
2022
 
2023
 
Degradation of SiC MOSFETs Under High-Bias Switching Events
Journal:IEEE Journal of Emerging and Selected Topics in Power Electronics
2022
Failure Mechanisms of Cascode GaN HEMTs under Overvoltage and Surge Energy Events
Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings
2021
GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery
Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings
2022
Hard-Switched Overvoltage Robustness of p-Gate GaN HEMTs at Increasing Temperatures
Proceeding/Conference:ECCE 2020 - IEEE Energy Conversion Congress and Exposition
2020
 
2021
Physics of Degradation in SiC MOSFETs Stressed by Overvoltage and Overcurrent Switching
Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings
2020
 
2022
 
Robustness of Cascode GaN HEMTs in Unclamped Inductive Switching
Journal:IEEE Transactions on Power Electronics
2022
Robustness of cascode GaN HEMTs under repetitive overvoltage and surge energy stresses
Proceeding/Conference:Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
2021
Robustness of GaN Gate Injection Transistors under Repetitive Surge Energy and Overvoltage
Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings
2021
 
Stability, Reliability, and Robustness of GaN Power Devices: A Review
Journal:IEEE Transactions on Power Electronics
2023
 
2021
 
Surge Current Interruption Capability of Discrete IGBT Devices in DC Hybrid Circuit Breakers
Journal:IEEE Journal of Emerging and Selected Topics in Power Electronics
2023
Surge Energy Robustness of GaN Gate Injection Transistors
Proceeding/Conference:IEEE International Reliability Physics Symposium Proceedings
2020
 
Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs
Journal:IEEE Transactions on Power Electronics
2020
 
2021