Showing results 1 to 2 of 2
| Title | Author(s) | Issue Date | |
|---|---|---|---|
First Demonstration of GAA Monolayer-MoS<inf>2</inf>Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2022 | ||
Nearly Ideal Subthreshold Swing in Monolayer MoS Top-Gate nFETs with Scaled EOT of 1 nm Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2022 |