Showing results 1 to 7 of 7
| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Arsenic doping kinetics in silicon during gas source molecular beam epitaxy Journal:Surface Science | 1998 | 47 | ||
Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grovvn by gas source molecular beam epitaxy Journal:Materials Science and Technology | 1995 | 30 | ||
Arsenic surface segregation and incorporation in Si and Si1-xGex during gas source molecular beam epitaxy Journal:Journal of Crystal Growth | 1997 | 51 | ||
Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy Journal:Semiconductor Science and Technology | 1995 | 68 | ||
Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy Journal:Journal of Crystal Growth | 1995 | 39 | ||
| 1996 | ||||
Unstrained, modulation-doped, In 0.3Ga 0.7As/In 0.29Al 0.71As field-effect transistor grown on GaAs substrate Journal:IEEE Electron Device Letters | 1992 | 104 |