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Article: Unstrained, modulation-doped, In 0.3Ga 0.7As/In 0.29Al 0.71As field-effect transistor grown on GaAs substrate

TitleUnstrained, modulation-doped, In 0.3Ga 0.7As/In 0.29Al 0.71As field-effect transistor grown on GaAs substrate
Authors
Tien, Norman CChen, JianhuiFernandez, JMWieder, HH
Issue Date1992
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
Ieee Electron Device Letters, 1992, v. 13 n. 12, p. 621-623 How to Cite?
DOI: http://dx.doi.org/10.1109/55.192864
AbstractThe fabrication, structure, and properties of unstrained modulation-doped, 1-μm-long and 10-μm-wide gate, field effect transistors made of In 0.3Ga 0.7As/In 0.29Al 0.71As heterojunctions grown on GaAs substrates using compositionally step-graded buffer layers are described. These devices have a transconductance of 335 mS/mm, f max of 56 GHz, and a gate breakdown voltage of 23.5 V.
Persistent Identifierhttp://hdl.handle.net/10722/148926
ISSN
0741-3106
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID
WOS:A1992JZ43700009

 

DC FieldValueLanguage
dc.contributor.authorTien, Norman Cen_HK
dc.contributor.authorChen, Jianhuien_HK
dc.contributor.authorFernandez, JMen_HK
dc.contributor.authorWieder, HHen_HK
dc.date.accessioned2012-06-20T06:16:51Z-
dc.date.available2012-06-20T06:16:51Z-
dc.date.issued1992en_HK
dc.identifier.citationIeee Electron Device Letters, 1992, v. 13 n. 12, p. 621-623en_HK
dc.identifier.issn0741-3106en_HK
dc.identifier.urihttp://hdl.handle.net/10722/148926-
dc.description.abstractThe fabrication, structure, and properties of unstrained modulation-doped, 1-μm-long and 10-μm-wide gate, field effect transistors made of In 0.3Ga 0.7As/In 0.29Al 0.71As heterojunctions grown on GaAs substrates using compositionally step-graded buffer layers are described. These devices have a transconductance of 335 mS/mm, f max of 56 GHz, and a gate breakdown voltage of 23.5 V.en_HK
dc.languageengen_US
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55en_HK
dc.relation.ispartofIEEE Electron Device Lettersen_HK
dc.titleUnstrained, modulation-doped, In 0.3Ga 0.7As/In 0.29Al 0.71As field-effect transistor grown on GaAs substrateen_HK
dc.typeArticleen_HK
dc.identifier.emailTien, Norman C: nctien@hku.hken_HK
dc.identifier.authorityTien, Norman C=rp01604en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/55.192864en_HK
dc.identifier.scopuseid_2-s2.0-0027001805en_HK
dc.identifier.volume13en_HK
dc.identifier.issue12en_HK
dc.identifier.spage621en_HK
dc.identifier.epage623en_HK
dc.identifier.isiWOS:A1992JZ43700009-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridTien, Norman C=7006532826en_HK
dc.identifier.scopusauthoridChen, Jianhui=36346655200en_HK
dc.identifier.scopusauthoridFernandez, JM=7404575272en_HK
dc.identifier.scopusauthoridWieder, HH=35444772000en_HK
dc.identifier.issnl0741-3106-

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