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Browsing by Author TANG, WM
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Showing results 139 to 158 of 290
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Title
Author(s)
Issue Date
Improved hydrogen-sensing performance of Pd/WO3/SiC Schottky diode by La doping
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Liu, Y
Lai, PT
Tang, WM
2016
Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric
Journal:
Applied Surface Science
SONG, X
XU, J
LIU, L
Lai, PT
TANG, WM
2019
Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer
Journal:
IEEE Transactions on Device and Materials Reliability
Lu, HH
Xu, JP
Liu, L
Lai, PT
Tang, WM
2017
Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer
Journal:
IEEE Transactions on Electron Devices
Lu, HH
Liu, L
Xu, JP
Lai, PT
Tang, WM
2017
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Journal:
Applied Physics Letters
Cheng, ZX
Xu, JP
Liu, L
Huang, Y
Lai, PT
Tang, WM
2016
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer
Journal:
Applied Physics Letters
HUANG, Y
XU, JP
LIU, L
CHENG, ZX
Lai, PT
TANG, WM
2017
Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation
Journal:
Applied Physics Letters
Huang, Y
Xu, JP
Liu, L
Lai, PT
Tang, WM
2016
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment
Journal:
Applied Surface Science
Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM
2019
Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric
Journal:
IEEE Electron Device Letters
Zhao, XY
Xu, JP
Liu, L
Lai, PT
Tang, WM
2020
Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer
Journal:
Microelectronics Reliability
Lu, HH
Xu, JP
Liu, L
Wang, LS
Lai, PT
Tang, WM
2016
Improved performance for OTFT with HfTiO2 as gate dielectric by N2O annealing
Proceeding/Conference:
IEEE Conference on Electron Devices and Solid-State Circuits (EDSSC)
Tang, WM
Cheng, KH
Leung, CH
Lai, PT
Xu, J
Che, CM
2007
Improved performance of Pd/WO3/SiC Schottky-diode hydrogen gas sensor by using fluorine plasma treatment
Journal:
Applied Physics Letters
LIU, Y
Tang, WM
Lai, PT
2015
Improved performance of pentacene organic thin-film transistor by using fluorine-implanted HfLaO as gate dielectric
Proceeding/Conference:
IEEE Semiconductor Interface Specialists Conference, SISC 2014
Han, CY
Tang, WM
Leung, CH
Che, CM
Lai, PT
2014
Improved performance of pentacene OTFT by incorporating Ti in NdON gate dielectric
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Ma, YX
Liu, LN
Tang, WM
Lai, PT
2017
Improved Performance of Pentacene OTFT by using Hybrid Oxide of Nd and Hf as Gate Dielectric
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Ma, Y
Tang, WM
Lai, PT
2018
Improved Sensing Characteristics of a Novel Pt/HfTiO2/SiC Schottky-Diode Hydrogen Sensor
Journal:
IEEE Transactions on Electron Devices
Tang, WM
Leung, CH
Lai, PT
2012
Improved sensing characteristics of MISiC Schottky-diode hydrogen sensor by using HfO2 as gate insulator
Journal:
Microelectronics Reliability
Tang, WM
Leung, CH
Lai, PT
2008
Improvement of Pentacene Organic Thin-Film Transistor by Using Fluorine Plasma-Treated or Ion-Implanted HfO2 as Gate Dielectric
Proceeding/Conference:
IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
Han, CY
Tang, WM
Lai, PT
2019
Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation
Journal:
IEEE Transactions on Electron Devices
Huang, Y
Xu, JP
Liu, L
Cheng, ZX
Lai, PT
Tang, WM
2017
Incidence and severity of femoral and tibial bowing among Chinese patients: how it effects preoperative planning in total knee replacement
Proceeding/Conference:
Hong Kong Journal of Orthopaedic Surgery
Yau, WP
Chiu, PKY
Ng, TP
Tang, WM
2005
